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TGS8704-SCC

Texas Instruments

TGS8704-SCC by Texas Instruments

TGS8704-SCC by Texas Instruments is a GAAS SPDT RF switch with 33.01 dBm CW power, 1.2 VSWR, and 26 dBm compression point. Operating from 0 to 6000 MHz, it has a low insertion loss of 1.2 dB making it ideal for RF/Microwave applications requiring high performance switches.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,419 parts In-Stock

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Digiode

USA . 2,556 parts In-Stock

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2,556

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Distributors (Availability)

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Parana Technologies

USA . 1,235 parts In-Stock

1+ parts

$0.999

100+ parts

-

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$1.882

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1,235

$0.999

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$1.882

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ChromeModa Solutions

Germany . 1,481 parts In-Stock

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$1.123

100+ parts

$0.921

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1,481

$1.123

$0.921

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IDEA Electronic Components Group

UK . 322 parts In-Stock

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$1.123

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$1.011

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322

$1.123

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$1.011

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One Stop Electronics

USA . 794 parts In-Stock

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$4.000

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794

$4.000

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AZTECH Wire

Italy . 645 parts In-Stock

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$7.277

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645

$7.277

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Ampacity Inc.

Singapore . 339 parts In-Stock

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$17.000

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339

$17.000

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Semicontronic

India . 862 parts In-Stock

1+ parts

$33.000

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$32.175

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$32.010

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862

$33.000

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$32.010

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Corphita

USA . 4,431 parts In-Stock

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DigiPath Technology Company

USA . 331 parts In-Stock

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$1.012

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331

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$1.012

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Corohmni

South Africa . 70 parts In-Stock

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Overview

Upgrade your RF/Microwave system with the TGS8704-SCC by Texas Instruments. With cutting-edge GAAS technology, this SPDT switch offers high performance and reliability. From minimized insertion loss to impressive power handling capabilities, this switch is designed to enhance your system's efficiency. Whether you're in aerospace, defense, or telecommunications, the TGS8704-SCC delivers superior quality and value for your applications. Trust Texas Instruments to provide top-notch solutions for all your RF/Microwave needs.

Feature Benefit Bullets

Maximum Input Power (CW): 33.01 dBm

This high maximum input power allows the switch to handle strong signals without distortion, making it suitable for demanding RF/microwave applications.

Maximum Voltage Standing Wave Ratio: 1.2

With a low VSWR, this switch ensures efficient power transfer and minimal signal reflection, resulting in reliable performance and improved signal integrity.

Compression Point (1 dB): 26 dBm

The high 1 dB compression point indicates the switch's ability to maintain linearity and stability at high power levels, ensuring consistent performance in challenging RF environments.

Maximum Insertion Loss: 1.2 dB

The low insertion loss of 1.2 dB minimizes signal attenuation and loss during RF/microwave signal transmission, maximizing overall system efficiency and performance.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology enables high-frequency operation, low noise performance, and high linearity, making this switch suitable for high-frequency RF and microwave applications.

RF or Microwave Device Type: SPDT

Being a Single-Pole Double-Throw (SPDT) switch, it offers versatility in signal routing, enabling seamless switching between two input/output paths, enhancing system flexibility and functionality.

Minimum Operating Frequency: 0 MHz

The ability to operate at 0 MHz allows for compatibility with a wide range of RF/microwave signals, making this switch suitable for diverse frequency applications.

Maximum Operating Frequency: 6000 MHz

With a high maximum operating frequency of 6000 MHz, this switch supports a broad range of RF/microwave signals, making it suitable for high-frequency applications.

Port Termination: ABSORPTIVE

The absorptive port termination helps to maintain signal purity and reduce signal reflections, ensuring reliable signal handling and minimizing interference in RF/microwave systems.

Technical Specifications

RF/Microwave Switches TGS8704-SCC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Compression Point (1 dB):

26 dBm

Maximum Input Power (CW):

33.01 dBm

Maximum Insertion Loss:

1.2 dB

No. of Functions:

1

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

0 MHz

Package Equivalence Code:

DIE OR CHIP

Port Termination:

ABSORPTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.2

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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