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TGS8122-SCC

Texas Instruments

TGS8122-SCC by Texas Instruments

TGS8122-SCC by Texas Instruments is an RF/Microwave SPDT switch with 34.77 dBm CW power, 1.4 VSWR, and 29 dBm compression point. Ideal for applications requiring reflective port termination in the frequency range of 8-11 GHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,322 parts In-Stock

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Vyrian

USA . 2,187 parts In-Stock

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Prism Electronics

USA . 22 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 73 parts In-Stock

1+ parts

$1.566

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$2.208

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73

$1.566

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$2.208

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ChromeModa Solutions

Germany . 1,014 parts In-Stock

1+ parts

$1.759

100+ parts

$1.442

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1,014

$1.759

$1.442

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IDEA Electronic Components Group

UK . 826 parts In-Stock

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$1.759

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$1.583

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826

$1.759

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$1.583

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AZTECH Wire

Italy . 380 parts In-Stock

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$10.737

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380

$10.737

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One Stop Electronics

USA . 1,595 parts In-Stock

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$36.000

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1,595

$36.000

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DigiPath Technology Company

USA . 842 parts In-Stock

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$1.586

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842

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$1.586

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Corphita

USA . 526 parts In-Stock

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526

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Perfect Parts

USA . 25 parts In-Stock

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Overview

Experience unparalleled quality and performance with the TGS8122-SCC RF/Microwave Switch by Texas Instruments. Designed with cutting-edge GAAS technology, this SPDT device offers an impressive Maximum Input Power of 34.77 dBm and a Compression Point of 29 dBm, ensuring reliable operation in demanding applications. Whether you're in telecommunications, aerospace, or test and measurement, this reflective port termination switch provides unmatched value and efficiency. Trust Texas Instruments to deliver top-notch products that exceed your expectations. Elevate your RF/Microwave system with the TGS8122-SCC today!

Feature Benefit Bullets

Maximum Input Power (CW) 34.77 dBm

High maximum input power allows for reliable performance even in high-power applications.

Maximum Voltage Standing Wave Ratio 1.4

Low VSWR indicates good impedance matching and minimal signal reflections, leading to improved signal quality.

Compression Point (1 dB) 29 dBm

High compression point ensures minimal signal distortion even at high power levels.

Construction COMPONENT

Component construction enables ease of integration and maintenance within larger RF/microwave systems.

Maximum Operating Temperature 70 °C

Wide operating temperature range allows for versatility in various environmental conditions.

Minimum Operating Temperature 0 °C

Low minimum operating temperature ensures functionality even in colder environments.

Technology GAAS

Gallium arsenide (GaAs) technology offers high reliability and performance in RF/microwave applications.

RF or Microwave Device Type SPDT

Single-Pole Double-Throw configuration provides flexibility in signal routing and switching applications.

Minimum Operating Frequency 8000 MHz

Low minimum operating frequency enables usage in a wide range of RF/microwave systems.

Maximum Operating Frequency 11000 MHz

High maximum operating frequency allows for compatibility with a wide range of RF/microwave devices and systems.

Port Termination REFLECTIVE

Reflective port termination minimizes signal loss and enhances signal integrity within the system.

Technical Specifications

RF/Microwave Switches TGS8122-SCC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Compression Point (1 dB):

29 dBm

Construction:

COMPONENT

Maximum Input Power (CW):

34.77 dBm

No. of Functions:

1

Maximum Operating Frequency:

11000 MHz

Minimum Operating Frequency:

8000 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.4

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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