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TGS8250XCMX

Texas Instruments

TGS8250XCMX by Texas Instruments

TGS8250XCMX by Texas Instruments is an RF/Microwave SPDT switch with a max input power of 30 dBm and VSWR of 1.5. Featuring a max insertion loss of 2.7 dB, it operates from 0-18000 MHz. Ideal for applications requiring high-frequency signal routing in communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,713 parts In-Stock

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8,713

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Digiode

USA . 3,341 parts In-Stock

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3,341

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 578 parts In-Stock

1+ parts

$1.048

100+ parts

-

1k+ parts

$1.910

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578

$1.048

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$1.910

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DigiPath Technology Company

USA . 126 parts In-Stock

1+ parts

$1.154

100+ parts

$1.062

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126

$1.154

$1.062

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ChromeModa Solutions

Germany . 6,487 parts In-Stock

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$1.178

100+ parts

$0.966

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6,487

$1.178

$0.966

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IDEA Electronic Components Group

UK . 294 parts In-Stock

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$1.178

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$1.060

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294

$1.178

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$1.060

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AZTECH Wire

Italy . 207 parts In-Stock

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$15.092

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207

$15.092

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Semicontronic

India . 1,091 parts In-Stock

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$27.000

100+ parts

$26.325

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$26.190

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1,091

$27.000

$26.325

$26.190

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One Stop Electronics

USA . 702 parts In-Stock

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$31.000

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702

$31.000

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Ampacity Inc.

Singapore . 156 parts In-Stock

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$33.000

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156

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Corphita

USA . 4,793 parts In-Stock

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Corohmni

South Africa . 292 parts In-Stock

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292

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Overview

Enhance your RF/Microwave system with the TGS8250XCMX by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge solutions for all your switching needs. This SPDT component offers a maximum input power of 30 dBm and a low insertion loss of 2.7 dB, ensuring optimal performance in a wide range of applications. From telecommunications to aerospace, this versatile switch provides unmatched value and efficiency, making it the ideal choice for discerning customers looking to elevate their systems to the next level.

Feature Benefit Bullets

Maximum Input Power (CW): 30 dBm

The high maximum input power of 30 dBm allows for robust and reliable performance in high-power applications.

Maximum Voltage Standing Wave Ratio: 1.5

The low VSWR of 1.5 ensures efficient power transfer and minimal signal reflection, resulting in better overall signal quality.

Construction: COMPONENT

Component-level construction ensures flexibility and ease of integration into various RF/microwave systems.

Maximum Insertion Loss: 2.7 dB

The low insertion loss of 2.7 dB minimizes signal loss and ensures high signal integrity, making it ideal for sensitive applications.

RF or Microwave Device Type: SPDT

The SPDT configuration provides versatility and allows for switching between two different signal paths, enabling various routing options.

Minimum Operating Frequency: 0 MHz

The wide frequency range starting from 0 MHz enables operation across a broad spectrum of frequencies, making it suitable for a wide range of applications.

Maximum Operating Frequency: 18000 MHz

The high maximum operating frequency of 18000 MHz makes it suitable for high-frequency RF/microwave applications, offering flexibility and versatility.

Technical Specifications

RF/Microwave Switches TGS8250XCMX attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

2.7 dB

Maximum Operating Frequency:

18000 MHz

Minimum Operating Frequency:

0 MHz

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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