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TGS8122SPC

Texas Instruments

TGS8122SPC by Texas Instruments

TGS8122SPC by Texas Instruments is a GAAS SPDT RF switch with 29 dBm compression point, operating from 0 to 70°C. It has a max frequency of 11 GHz and reflective port termination. Ideal for RF/microwave applications requiring high power handling and wide temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,284 parts In-Stock

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Digiode

USA . 239 parts In-Stock

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239

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Parana Technologies

USA . 934 parts In-Stock

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$1.153

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-

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$1.966

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934

$1.153

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$1.966

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DigiPath Technology Company

USA . 1,494 parts In-Stock

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$1.269

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$1.269

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ChromeModa Solutions

Germany . 3,558 parts In-Stock

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$1.295

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$1.062

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3,558

$1.295

$1.062

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IDEA Electronic Components Group

UK . 1,346 parts In-Stock

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$1.295

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$1.166

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$1.295

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Semicontronic

India . 807 parts In-Stock

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$5.000

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$4.875

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$4.850

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807

$5.000

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$4.850

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AZTECH Wire

Italy . 806 parts In-Stock

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$7.120

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806

$7.120

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One Stop Electronics

USA . 1,291 parts In-Stock

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$8.000

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Corphita

USA . 2,232 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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Overview

Discover the superior performance of the TGS8122SPC RF/Microwave Switch by Texas Instruments. With a compression point of 29 dBm and operating frequencies up to 11000 MHz, this SPDT switch offers unmatched reliability and precision. Whether you're in the telecommunications, aerospace, or defense industries, this high-quality switch provides seamless connectivity and improved signal integrity. Trust Texas Instruments for cutting-edge technology and elevate your RF/microwave applications with the TGS8122SPC.

Feature Benefit Bullets

Compression Point (1 dB): 29 dBm

High compression point of 29 dBm ensures high linearity and minimal signal distortion, making this product suitable for applications requiring accurate and reliable RF/microwave signal switching.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this switch can withstand high temperatures, making it suitable for use in environments where heat dissipation is a concern.

Minimum Operating Temperature: 0 °C

The ability to operate at a minimum temperature of 0°C ensures this switch can function in colder environments, increasing its versatility and reliability.

Technology: GAAS

Utilizing Gallium Arsenide (GAAS) technology provides high performance and reliability in RF/microwave switching applications, ensuring consistent and efficient operation.

RF or Microwave Device Type: SPDT

Single Pole Double Throw (SPDT) configuration allows for signal routing between two ports, making it versatile for various RF/microwave signal switching requirements.

Maximum Operating Frequency: 11000 MHz

With a high operating frequency of 11 GHz, this switch is suitable for high-frequency RF/microwave signal applications, offering broad bandwidth and reliable performance.

Port Termination: REFLECTIVE

Reflected power termination helps minimize signal loss and ensure efficient signal transmission, making this switch ideal for applications requiring high signal integrity and performance.

Technical Specifications

RF/Microwave Switches TGS8122SPC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Compression Point (1 dB):

29 dBm

No. of Functions:

1

Maximum Operating Frequency:

11000 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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