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TGS8122SSC

Texas Instruments

TGS8122SSC by Texas Instruments

TGS8122SSC by Texas Instruments is a GAAS SPDT RF switch with 29 dBm compression point, operating from 0 to 70°C. It has a max frequency of 11 GHz and reflective port termination. Ideal for RF/microwave applications requiring high power handling and wide temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,365 parts In-Stock

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5,365

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Digiode

USA . 371 parts In-Stock

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371

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,350 parts In-Stock

1+ parts

$1.193

100+ parts

$110.751

1k+ parts

$1.073

10k+ parts

-

2,350

$1.193

$110.751

$1.073

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DigiPath Technology Company

USA . 262 parts In-Stock

1+ parts

$1.313

100+ parts

$1.208

1k+ parts

-

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262

$1.313

$1.208

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ChromeModa Solutions

Germany . 6,758 parts In-Stock

1+ parts

$1.340

100+ parts

$1.099

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-

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6,758

$1.340

$1.099

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IDEA Electronic Components Group

UK . 989 parts In-Stock

1+ parts

$1.340

100+ parts

-

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$1.206

10k+ parts

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989

$1.340

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$1.206

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Semicontronic

India . 156 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

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156

$2.000

$1.950

$1.940

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AZTECH Wire

Italy . 722 parts In-Stock

1+ parts

$8.670

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722

$8.670

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Ampacity Inc.

Singapore . 975 parts In-Stock

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$17.000

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975

$17.000

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One Stop Electronics

USA . 1,505 parts In-Stock

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$34.000

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1,505

$34.000

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Corphita

USA . 4,674 parts In-Stock

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4,674

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Corohmni

South Africa . 212 parts In-Stock

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Overview

Experience the innovation and quality of Texas Instruments with the TGS8122SSC RF/Microwave Switch. This SPDT device offers exceptional performance with a compression point of 29 dBm and a maximum operating frequency of 11000 MHz. Whether you're in the telecommunications, aerospace, or defense industries, this reflective port termination switch provides reliable and efficient signal routing for your applications. Trust in Texas Instruments for cutting-edge technology that delivers value and peace of mind to customers looking for top-tier solutions.

Feature Benefit Bullets

Compression Point (1 dB): 29 dBm

High compression point indicates the ability to handle high power levels without distortion, making it suitable for high-power applications.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for operation in colder temperatures without failure.

Technology: GAAS

GAAS technology offers high frequency capabilities and low noise, making it ideal for RF and microwave applications.

RF or Microwave Device Type: SPDT

SPDT configuration provides flexibility for switching between two different signal paths, increasing versatility in the system design.

Maximum Operating Frequency: 11000 MHz

High maximum operating frequency allows for use in wideband applications and higher frequency ranges.

Port Termination: REFLECTIVE

Reflective port termination helps in minimizing signal loss and reflections, ensuring efficient signal routing.

Technical Specifications

RF/Microwave Switches TGS8122SSC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Compression Point (1 dB):

29 dBm

No. of Functions:

1

Maximum Operating Frequency:

11000 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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