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SPM3205

Onsemi

SPM3205 by Onsemi

Onsemi's SPM3205 RF/Microwave Switch offers 1.5 VSWR, 15 dBm compression point, and 0.85 dB max insertion loss. Ideal for SPDT applications up to 1033 MHz with GAAS technology, it operates b/w -20 °C to 85°C in a surface mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,048 parts In-Stock

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Vyrian

USA . 1,276 parts In-Stock

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TANS Electronics

Latvia . 7,958 parts In-Stock

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Problanco Electronics

Mexico . 7,693 parts In-Stock

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SupplyDigital Components

Austria . 5,244 parts In-Stock

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Kulean Microsystems

USA . 2,253 parts In-Stock

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Corphita

USA . 781 parts In-Stock

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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Overview

Upgrade your RF/Microwave system with the Onsemi SPM3205 switch, designed to deliver top-notch performance and reliability. With its cutting-edge GAAS technology and superior manufacturing by Onsemi, this SPDT switch offers unmatched quality and precision. Perfect for a wide range of applications, from communications to aerospace, this switch boasts a low insertion loss of 0.85 dB and a minimum isolation of 15 dB. Experience seamless connectivity and enhanced efficiency with the SPM3205 - the ultimate choice for your RF/Microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and cost-effective.

Maximum Voltage Standing Wave Ratio: 1.5

The low maximum VSWR value ensures efficient power transfer and minimal signal reflection, resulting in reliable performance.

Compression Point (1 dB): 15 dBm

The high compression point allows the product to handle high power levels without distortion, ensuring signal integrity.

No. of Terminals: 6

Having 6 terminals provides greater flexibility in connectivity options and can accommodate various system configurations.

Maximum Operating Temperature: 85 °C

The wide operating temperature range enables the product to function effectively in different environmental conditions.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature ensures reliable operation even in colder temperatures.

Maximum Insertion Loss: 0.85 dB

The low insertion loss ensures minimal signal attenuation, maintaining signal strength and quality.

Nominal On Time: 0.02 us

The fast nominal on time improves response time, making the product suitable for high-speed switching applications.

Technology: GAAS

The GaAs technology offers high frequency capabilities and low noise performance, making the product suitable for RF and microwave applications.

RF or Microwave Device Type: SPDT

Being a Single Pole Double Throw switch provides flexibility in routing RF or microwave signals between two paths.

Minimum Isolation: 15 dB

The high minimum isolation ensures that signals on different paths remain separate, minimizing interference and enhancing signal quality.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and allows for easy integration into PCBs or other electronic assemblies.

Maximum Operating Frequency: 1033 MHz

The high maximum operating frequency makes the product suitable for use in a wide range of RF and microwave applications.

Technical Specifications

RF/Microwave Switches SPM3205 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

15 dBm

Maximum Insertion Loss:

.85 dB

Minimum Isolation:

15 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.02 us

Maximum Operating Frequency:

1033 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

TSOP6,.11,37

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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