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SPM3255

Onsemi

SPM3255 by Onsemi

The Onsemi SPM3255 is a SPDT RF/Microwave switch with max freq of 1900 MHz. It offers low insertion loss of 0.9 dB and high isolation of 20 dB, making it ideal for wireless communication systems. With a compact surface mount package and fast switching time of 0.02 us, it operates efficiently in temperatures ranging from -20 to 70 °C.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Kepictronics

USA . 39,000 parts In-Stock

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Problanco Electronics

Mexico . 8,128 parts In-Stock

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Kulean Microsystems

USA . 6,777 parts In-Stock

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TANS Electronics

Latvia . 6,086 parts In-Stock

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Corphita

USA . 1,917 parts In-Stock

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SupplyDigital Components

Austria . 1,325 parts In-Stock

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UHIMA Technologies

Türkiye . 924 parts In-Stock

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Corohmni

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Overview

Elevate your RF/Microwave system with the SPM3255 from Onsemi. This high-quality SPDT switch offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. From communication systems to radar equipment, this versatile switch delivers seamless signal routing and exceptional isolation. With a maximum insertion loss of 0.9 dB and a compression point of 20 dBm, the SPM3255 ensures optimal performance under any operating conditions. Trust in Onsemi's reputation for excellence and unlock the full potential of your RF/Microwave system today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures a lightweight and durable construction, making it suitable for a wide range of applications.

Maximum Voltage Standing Wave Ratio: 2

A low maximum VSWR of 2 indicates efficient power transfer and minimal signal loss, ensuring high performance and reliability.

Compression Point (1 dB): 20 dBm

With a high compression point of 20 dBm, this RF/microwave switch can handle high power levels without distortion, making it ideal for demanding applications.

Power Supplies (V): 3

Operating at a power supply of 3V allows for compatibility with a wide range of systems, providing flexibility and ease of integration.

No. of Terminals: 6

Having 6 terminals allows for versatile connectivity options, enabling the switch to be effectively used in various circuit configurations.

Maximum Operating Temperature: 70 °C

A high maximum operating temperature of 70 °C ensures reliable performance even in demanding thermal conditions, increasing the overall durability of the product.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20 °C allows for operation in cold environments, making this switch suitable for a wide range of temperature conditions.

Maximum Insertion Loss: 0.9 dB

With a low maximum insertion loss of 0.9 dB, this switch minimizes signal loss, ensuring efficient performance and high signal integrity.

Nominal On Time: 0.02 us

The fast nominal on time of 0.02 microseconds allows for quick switching speeds, enabling rapid response and seamless operation in dynamic applications.

RF or Microwave Device Type: SPDT

Being a Single Pole Double Throw (SPDT) device, this switch offers flexibility in routing RF/microwave signals, making it suitable for a wide range of switching applications.

Minimum Isolation: 20 dB

With a minimum isolation of 20 dB, this switch effectively separates input and output signals, reducing signal interference and ensuring reliable performance.

Mounting Feature: SURFACE MOUNT

The surface mounting feature provides ease of installation and space-saving benefits, making this switch suitable for compact and densely packed electronic systems.

Maximum Operating Frequency: 1900 MHz

Operating at a high frequency of 1900 MHz enables this switch to handle a wide range of RF/microwave signals, making it versatile and suitable for various applications.

Technical Specifications

RF/Microwave Switches SPM3255 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

20 dBm

Maximum Insertion Loss:

.9 dB

Minimum Isolation:

20 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.02 us

Maximum Operating Frequency:

1900 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

TSOP6,.11,37

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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