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SPM3225

Onsemi

SPM3225 by Onsemi

Onsemi's SPM3225 RF/Microwave Switch offers 1.5 VSWR, 31 dBm compression point, and 0.6 dB max insertion loss. Ideal for SPDT applications in GAAS technology with 2500 MHz operating frequency, it has a plastic/epoxy package and operates b/w -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,845 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 8,388 parts In-Stock

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SupplyDigital Components

Austria . 7,621 parts In-Stock

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Kulean Microsystems

USA . 7,518 parts In-Stock

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TANS Electronics

Latvia . 1,383 parts In-Stock

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Corphita

USA . 1,103 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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UHIMA Technologies

Türkiye . 244 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the SPM3225 by Onsemi, a top-of-the-line RF/Microwave Switch that promises unparalleled performance and reliability. With a maximum voltage standing wave ratio of 1.5 and a compression point of 31 dBm, this switch is designed to meet the most demanding requirements in various applications. Whether you're in telecommunications, aerospace, or defense, the SPM3225 offers seamless integration and optimal functionality. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that this advanced switch brings to your projects. Elevate your performance with the SPM3225 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Maximum Voltage Standing Wave Ratio: 1.5

With a maximum VSWR of 1.5, this product ensures efficient power transfer and minimizes signal reflections, leading to better overall performance in RF/microwave systems.

Compression Point (1 dB): 31 dBm

The high compression point of 31 dBm allows the switch to handle high power levels without significant distortion, making it suitable for demanding applications that require high power handling capabilities.

Power Supplies (V): 1.8/3

The capability to operate on both 1.8V and 3V power supplies offers flexibility in system design and compatibility with a wide range of power sources.

No. of Terminals: 6

The presence of 6 terminals provides versatile connectivity options and enables the switch to interface with multiple components in the RF/microwave system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this switch can withstand high temperature environments, making it suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C ensures reliable performance in harsh environmental conditions, expanding the range of potential use cases for this product.

Maximum Insertion Loss: 0.6 dB

The low insertion loss of 0.6 dB minimizes signal attenuation and ensures efficient signal transmission through the switch, leading to improved system performance.

Nominal On Time: 0.02 us

The fast nominal on time of 0.02 microseconds allows for quick switching between RF/microwave signals, enabling rapid response times in dynamic applications.

Technology: GAAS

Built with GaAs technology, this switch offers high linearity, low noise, and fast switching speeds, making it a reliable choice for applications that require high performance RF/microwave devices.

RF or Microwave Device Type: SPDT

As a Single Pole Double Throw (SPDT) switch, this product offers flexibility in signal routing and enables seamless transition between different RF/microwave paths, maximizing system versatility.

Minimum Isolation: 16 dB

The minimum isolation of 16 dB ensures that signals on different ports remain separate, reducing interference and crosstalk in the RF/microwave system for improved signal clarity.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and allows for compact integration into circuit boards, saving space and facilitating ease of assembly.

Maximum Operating Frequency: 2500 MHz

With a maximum operating frequency of 2500 MHz, this switch is well-suited for high-frequency RF/microwave applications, providing reliable performance in demanding frequency ranges.

Technical Specifications

RF/Microwave Switches SPM3225 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

31 dBm

Maximum Insertion Loss:

.6 dB

Minimum Isolation:

16 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.02 us

Maximum Operating Frequency:

2500 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

1.8/3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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