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SPM3226

Onsemi

SPM3226 by Onsemi

SPM3226 by Onsemi is a RF/Microwave Switch with 1.5 VSWR, 0.55 dB insertion loss, and 15 dB isolation. It's a SPDT device suitable for surface mount applications in temperature range of -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,898 parts In-Stock

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Digiode

USA . 845 parts In-Stock

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Kulean Microsystems

USA . 7,112 parts In-Stock

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SupplyDigital Components

Austria . 5,266 parts In-Stock

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TANS Electronics

Latvia . 2,672 parts In-Stock

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Problanco Electronics

Mexico . 2,580 parts In-Stock

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Corphita

USA . 595 parts In-Stock

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UHIMA Technologies

Türkiye . 392 parts In-Stock

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Corohmni

South Africa . 323 parts In-Stock

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Overview

Elevate your RF/Microwave system with the SPM3226 by Onsemi, a high-quality SPDT switch that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this switch is designed for applications where precision and speed are critical. With low insertion loss, high isolation, and fast switching times, the SPM3226 provides unmatched value and benefits to customers looking to optimize their systems. Upgrade your RF/Microwave setup today with the SPM3226 and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers durability and reliability, making the product suitable for various environmental conditions.

Maximum Voltage Standing Wave Ratio: 1.5

Low VSWR ensures efficient power transfer and minimal signal reflection, leading to better overall performance.

No. of Terminals: 6

The higher number of terminals allow for more flexibility in connecting the switch to other components or devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures the switch can function reliably even in elevated temperature environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the switch to operate effectively in cold environments without any performance issues.

Maximum Insertion Loss: 0.55 dB

Low insertion loss means minimal power loss during signal transmission, ensuring efficient operation of the switch.

Nominal On Time: 0.02 us

Fast switching speed allows for quick and precise signal routing, making the switch suitable for applications requiring rapid switching.

RF or Microwave Device Type: SPDT

Single-Pole Double-Throw design provides flexibility in signal routing, allowing the switch to be used in various RF/microwave applications.

Minimum Isolation: 15 dB

High isolation helps in preventing unwanted signal leakage and ensures that signals remain separate, leading to improved overall performance.

Mounting Feature: SURFACE MOUNT

Surface mount design facilitates easy and secure installation of the switch onto circuit boards, making it convenient for integration into electronic systems.

Technical Specifications

RF/Microwave Switches SPM3226 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Maximum Insertion Loss:

.55 dB

Minimum Isolation:

15 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.02 us

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.03,18

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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