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SPM3221

Onsemi

SPM3221 by Onsemi

Onsemi's SPM3221 RF/Microwave Switch offers 1.5 VSWR, 27 dBm compression point, and 0.4 dB max insertion loss. Ideal for SPDT applications in GAAS technology with 2500 MHz operating frequency range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,815 parts In-Stock

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Problanco Electronics

Mexico . 4,080 parts In-Stock

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SupplyDigital Components

Austria . 3,421 parts In-Stock

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Kulean Microsystems

USA . 2,747 parts In-Stock

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TANS Electronics

Latvia . 2,734 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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UHIMA Technologies

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Corphita

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Overview

Enhance your RF and microwave systems with the SPM3221 by Onsemi, a high-quality SPDT switch that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this switch is perfect for applications requiring fast switching speeds and low insertion loss. With a maximum operating frequency of 2500 MHz and a compression point of 27 dBm, the SPM3221 ensures seamless operation and optimal signal integrity. Upgrade your systems today and experience the superior quality and performance that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the switch lightweight and durable, suitable for portable or rugged applications.

Maximum Voltage Standing Wave Ratio: 1.5

Low VSWR ensures minimal signal loss and efficient power transfer, resulting in high performance and accuracy in signal routing.

Compression Point (1 dB): 27 dBm

High compression point allows the switch to handle high-power RF signals without distortion, ensuring reliability in demanding operating conditions.

Power Supplies (V): 3

Operating at 3 volts makes this switch energy-efficient and ideal for battery-powered devices or low-power applications.

No. of Terminals: 6

Having 6 terminals provides versatility in connectivity options and enables complex signal routing configurations for diverse RF/Microwave setups.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this switch can withstand elevated temperatures, ensuring reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the switch to function effectively in cold environments without compromising performance.

Maximum Insertion Loss: 0.4 dB

Low insertion loss minimizes signal attenuation during switching, preserving signal integrity and maintaining high signal purity.

Nominal On Time: 0.05 us

Fast switching with a nominal on time of 0.05 microseconds ensures quick response and minimal signal interruption, ideal for high-speed RF applications.

Technology: GAAS

Utilizing Gallium Arsenide technology ensures high-frequency capability and low noise performance, enhancing the overall efficiency and reliability of the switch.

RF or Microwave Device Type: SPDT

Being a Single Pole Double Throw switch provides flexibility in routing RF signals by offering two possible signal paths, enabling diverse signal routing options.

Minimum Isolation: 27 dB

High isolation of 27 dB minimizes signal interference and crosstalk between RF channels, ensuring clean and precise signal routing with minimal distortion.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy installation on circuit boards, saving space and enabling streamlined integration in compact electronic devices.

Maximum Operating Frequency: 2500 MHz

Supporting a maximum frequency of 2500 MHz enables this switch to handle high-speed RF signals, making it suitable for a wide range of RF and microwave applications.

Technical Specifications

RF/Microwave Switches SPM3221 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

27 dBm

Maximum Insertion Loss:

.4 dB

Minimum Isolation:

27 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.05 us

Maximum Operating Frequency:

2500 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

FL6,.07,25

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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