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SPM3315

Onsemi

SPM3315 by Onsemi

Onsemi's SPM3315 RF/Microwave Switch offers 1.5 VSWR, 29 dBm compression point, and 17 dB isolation. Ideal for SPDT applications up to 2500 MHz with a max insertion loss of 0.5 dB. Suitable for surface mount installations in temperature range -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,490 parts In-Stock

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Digiode

USA . 916 parts In-Stock

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Problanco Electronics

Mexico . 7,028 parts In-Stock

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TANS Electronics

Latvia . 5,031 parts In-Stock

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SupplyDigital Components

Austria . 4,124 parts In-Stock

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Kulean Microsystems

USA . 4,061 parts In-Stock

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Corphita

USA . 2,156 parts In-Stock

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UHIMA Technologies

Türkiye . 132 parts In-Stock

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Corohmni

South Africa . 71 parts In-Stock

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Overview

Enhance your RF/Microwave system with the SPM3315 by Onsemi - a high-quality, reliable SPDT switch designed to meet your demanding requirements. With a maximum insertion loss of just 0.5 dB and a minimum isolation of 17 dB, this switch offers exceptional performance for applications up to 2500 MHz. Manufactured by industry leader Onsemi, you can trust in the superior craftsmanship and durability of this product. Experience seamless integration and improved efficiency with the SPM3315, setting a new standard for RF/Microwave switches in the market today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and cost-effective.

Maximum Voltage Standing Wave Ratio: 1.5

The low maximum VSWR value of 1.5 indicates excellent signal reflection properties and efficient power transfer within the system.

Compression Point (1 dB): 29 dBm

With a high compression point of 29 dBm, this switch is capable of handling high power levels without distortion, making it suitable for demanding RF/microwave applications.

Power Supplies (V): 2.7

The low power supply requirement of 2.7V makes the product energy-efficient and compatible with a wide range of systems.

No. of Terminals: 6

The presence of 6 terminals allows for versatile connectivity options, enabling seamless integration into various RF/microwave setups.

Maximum Operating Temperature: 85 °C

The wide maximum operating temperature range of 85 °C ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C makes the switch suitable for applications in cold climates or temperature-controlled environments.

Maximum Insertion Loss: 0.5 dB

The low maximum insertion loss of 0.5 dB ensures minimal signal degradation during transmission, maintaining high signal integrity.

RF or Microwave Device Type: SPDT

As a Single-Pole Double-Throw switch, this product offers versatile functionality for routing RF/microwave signals between two paths, enhancing system flexibility.

Minimum Isolation: 17 dB

The high minimum isolation of 17 dB ensures minimal signal interference between input and output ports, enhancing signal purity and system performance.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and PCB integration, saving space and time during deployment.

Maximum Operating Frequency: 2500 MHz

With a high maximum operating frequency of 2500 MHz, this switch is suitable for high-frequency RF/microwave applications, providing broad signal coverage.

Technical Specifications

RF/Microwave Switches SPM3315 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

29 dBm

Maximum Insertion Loss:

.5 dB

Minimum Isolation:

17 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

2500 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.03,18

Power Supplies (V):

2.7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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