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SPM3314

Onsemi

SPM3314 by Onsemi

Onsemi's SPM3314 RF/Microwave Switch offers 1.5 VSWR, 29 dBm compression point, and 17 dB isolation. Ideal for SPDT applications up to 2500 MHz with a 0.5 dB insertion loss. Package is plastic/epoxy suitable for surface mount installations in temperatures ranging from -40 °C to 85°C.

Median Price

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Austria . 6,595 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Corohmni

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TANS Electronics

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Overview

Elevate your RF/Microwave systems with the SPM3314 by Onsemi. Crafted with precision and expertise, this SPDT switch offers superior performance with a low insertion loss of 0.5 dB and minimum isolation of 17 dB. Its durable plastic/epoxy body ensures reliability in a wide range of temperatures from -40 to 85 °C. Perfect for high-frequency applications up to 2500 MHz, this switch delivers exceptional value and efficiency to meet your demanding requirements. Upgrade your system today with the SPM3314 and experience top-notch quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures lightweight construction and durability, making it suitable for various applications.

Maximum Voltage Standing Wave Ratio: 1.5

Low VSWR of 1.5 ensures efficient power transfer and minimal signal loss, making it a reliable choice for high-frequency applications.

Compression Point (1 dB): 29 dBm

High compression point of 29 dBm enables the switch to handle high power levels without distortion, ensuring reliable performance in demanding RF/microwave systems.

Power Supplies (V): 2.7

Low power supply requirement of 2.7V ensures energy efficiency and compatibility with a wide range of power sources.

No. of Terminals: 6

6 terminals provide flexibility in connecting the switch to other components, enabling versatile integration into RF/microwave systems.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures reliable performance in harsh environmental conditions, making it suitable for outdoor and industrial applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C ensures reliable operation in cold environments, expanding the range of applications for this switch.

Maximum Insertion Loss: 0.5 dB

Low insertion loss of 0.5 dB ensures minimal signal degradation during switching, maintaining signal integrity in RF/microwave systems.

RF or Microwave Device Type: SPDT

Single-pole, double-throw (SPDT) configuration allows for switching between two signal paths, providing flexibility in routing RF/microwave signals.

Minimum Isolation: 17 dB

High isolation of 17 dB between switch ports ensures minimal interference between signal paths, maintaining signal purity in complex RF/microwave systems.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and integration of the switch into PCBs, saving space and reducing assembly time.

Maximum Operating Frequency: 2500 MHz

High maximum operating frequency of 2500 MHz allows the switch to handle a wide range of RF/microwave signals, making it suitable for multi-frequency applications.

Technical Specifications

RF/Microwave Switches SPM3314 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

29 dBm

Maximum Insertion Loss:

.5 dB

Minimum Isolation:

17 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

2500 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.03,18

Power Supplies (V):

2.7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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