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SPM3252

Onsemi

SPM3252 by Onsemi

The Onsemi SPM3252 is a GAAS technology RF switch with SPDT configuration. It offers low insertion loss of 0.95 dB and high isolation of 20 dB at a max operating frequency of 1900 MHz. Ideal for RF/Microwave applications, it has a fast on time of 0.02 us and operates in temperatures ranging from -20 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,015 parts In-Stock

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Digiode

USA . 588 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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Kulean Microsystems

USA . 5,080 parts In-Stock

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SupplyDigital Components

Austria . 3,893 parts In-Stock

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Problanco Electronics

Mexico . 2,052 parts In-Stock

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Corphita

USA . 1,512 parts In-Stock

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UHIMA Technologies

Türkiye . 386 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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TANS Electronics

Latvia . 114 parts In-Stock

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Overview

Experience seamless connectivity and enhanced performance with the SPM3252 RF/Microwave Switch by Onsemi. Crafted with precision and quality, this SPDT switch offers a maximum insertion loss of 0.95 dB and minimum isolation of 20 dB, ensuring optimal signal transmission. Perfect for applications in telecommunications, aerospace, and defense industries, this surface mount switch operates at frequencies up to 1900 MHz. Trust in Onsemi's reputation for excellence and innovation, and elevate your products with the reliability and efficiency of the SPM3252. Elevate your connectivity game today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it suitable for long-term use in various environments.

Maximum Voltage Standing Wave Ratio: 2

Having a low VSWR of 2 ensures efficient power transfer and minimal signal loss, resulting in high performance and reliable signal switching.

No. of Terminals: 6

The 6 terminals allow for versatile connectivity options, enabling the switch to be easily integrated into different RF and microwave systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this switch can handle demanding operating conditions without compromising performance.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20 °C ensures that the switch can operate in cold environments without any issues.

Maximum Insertion Loss: 0.95 dB

The low insertion loss of 0.95 dB ensures minimal signal loss during switching, maintaining high signal integrity in the RF or microwave system.

Nominal On Time: 0.02 us

The fast on time of 0.02 microseconds ensures quick and efficient signal switching, making this switch suitable for applications requiring rapid response times.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology ensures high-frequency operation and low noise, enhancing the overall performance of the RF or microwave switch.

RF or Microwave Device Type: SPDT

Being a Single-Pole Double-Throw (SPDT) switch allows for versatile signal routing options, making it a flexible choice for various RF and microwave applications.

Minimum Isolation: 20 dB

The minimum isolation of 20 dB ensures that the switch can effectively isolate signals and prevent interference, enhancing the overall signal quality in the system.

Mounting Feature: SURFACE MOUNT

The surface mount feature enables easy and secure installation of the switch onto circuit boards, saving space and simplifying the overall design of the system.

Maximum Operating Frequency: 1900 MHz

With a high maximum operating frequency of 1900 MHz, this switch is capable of handling high-frequency RF and microwave signals, making it suitable for a wide range of applications.

Technical Specifications

RF/Microwave Switches SPM3252 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Maximum Insertion Loss:

.95 dB

Minimum Isolation:

20 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.02 us

Maximum Operating Frequency:

1900 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

TSOP6,.11,37

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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