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SPM3202

Onsemi

SPM3202 by Onsemi

The Onsemi SPM3202 is a GAAS technology RF switch with SPDT configuration. It offers low insertion loss of 0.85 dB and high isolation of 15 dB. Suitable for RF/Microwave applications, it has a fast on time of 0.02 us and operates b/w -20 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,266 parts In-Stock

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Vyrian

USA . 1,714 parts In-Stock

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1,714

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Kulean Microsystems

USA . 5,900 parts In-Stock

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5,900

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SupplyDigital Components

Austria . 4,708 parts In-Stock

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Problanco Electronics

Mexico . 4,351 parts In-Stock

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TANS Electronics

Latvia . 3,265 parts In-Stock

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Corphita

USA . 1,371 parts In-Stock

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Corohmni

South Africa . 312 parts In-Stock

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UHIMA Technologies

Türkiye . 14 parts In-Stock

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Overview

Discover the high-quality SPM3202 RF/Microwave Switch by Onsemi, a top-tier manufacturer known for delivering reliable and innovative solutions. This cutting-edge product offers unparalleled performance in various applications, providing customers with seamless switching capabilities and superior efficiency. With a low insertion loss and high isolation, this switch ensures optimal signal integrity while maximizing energy efficiency. Upgrade your systems with the SPM3202 and experience the difference in quality and reliability that Onsemi is renowned for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and size are a concern.

Maximum Voltage Standing Wave Ratio: 1.5

The low VSWR value ensures efficient power transfer and minimal signal loss, making it suitable for high-performance RF/Microwave systems.

Compression Point (1 dB): 15 dBm

With a high compression point, the product can handle high power levels without significant signal distortion, ensuring reliable performance under demanding conditions.

No. of Terminals: 6

Having 6 terminals allows for versatile connectivity options, enabling the switch to be used in a variety of circuit configurations and applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range of 85 °C ensures the switch can operate reliably in challenging thermal environments.

Minimum Operating Temperature: -20 °C

With a low minimum operating temperature of -20 °C, the switch can function effectively in cold conditions without performance degradation.

Maximum Insertion Loss: 0.85 dB

The low insertion loss value indicates minimal signal attenuation during switching operations, ensuring reliable and efficient RF/Microwave signal transmission.

Nominal On Time: 0.02 us

The fast on-time of 0.02 microseconds allows for quick switching between signal paths, making the switch suitable for high-speed RF/Microwave applications.

Technology: GAAS

The GaAs technology used in the switch offers high linearity and low noise characteristics, making it ideal for demanding RF/Microwave signal processing applications.

RF or Microwave Device Type: SPDT

Being a Single-Pole Double Throw switch, it provides flexibility in routing signals between two different paths, allowing for effective signal switching in RF/Microwave systems.

Minimum Isolation: 15 dB

The high isolation value ensures that signal paths remain separate and interference-free, critical for maintaining signal integrity and minimizing crosstalk in RF/Microwave circuits.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure installation on PCBs, saving space and simplifying manufacturing processes for RF/Microwave systems.

Technical Specifications

RF/Microwave Switches SPM3202 attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

15 dBm

Maximum Insertion Loss:

.85 dB

Minimum Isolation:

15 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.02 us

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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