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NSG1001MXT1G

Onsemi

NSG1001MXT1G by Onsemi

NSG1001MXT1G by Onsemi is a RF/Microwave Switch with 6 terminals, operating from -40 to 105 °C. It offers high isolation of 20 dB, low insertion loss of 0.95 dB, and can handle frequencies from 2500 to 8000 MHz. Ideal for diversity switch applications due to its surface mount construction and compression point of 27 dBm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,368 parts In-Stock

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Vyrian

USA . 347 parts In-Stock

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Kulean Microsystems

USA . 4,134 parts In-Stock

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TANS Electronics

Latvia . 3,926 parts In-Stock

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SupplyDigital Components

Austria . 2,894 parts In-Stock

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Problanco Electronics

Mexico . 2,824 parts In-Stock

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Corphita

USA . 1,552 parts In-Stock

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Corohmni

South Africa . 187 parts In-Stock

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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Overview

Upgrade your RF/Microwave system with the NSG1001MXT1G by Onsemi. With a compression point of 27 dBm and minimum isolation of 20 dB, this diversity switch offers superior performance and reliability. Designed with high-quality materials and precision construction, this component ensures seamless operation even in extreme temperatures. Whether you're working in telecommunications, aerospace, or defense, this product delivers unmatched value and efficiency. Trust Onsemi for cutting-edge technology that elevates your applications to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material is durable and lightweight, making the switch easy to handle and install while ensuring long-term reliability.

Compression Point (1 dB): 27 dBm

High compression point ensures that the switch can handle high power levels without distortion, making it suitable for high-power applications.

Construction: COMPONENT

Component-based construction ensures reliability and ease of maintenance, allowing for easy repair or replacement of individual components if needed.

No. of Terminals: 6

Having 6 terminals allows for versatile connection options, making the switch suitable for various RF/microwave setups and configurations.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures the switch can withstand elevated temperatures without performance degradation, making it suitable for demanding environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the switch can operate in cold environments without issues, enhancing its versatility.

Maximum Insertion Loss: 0.95 dB

Low insertion loss ensures minimal signal loss when the switch is in use, maintaining signal integrity and ensuring high performance.

RF or Microwave Device Type: DIVERSITY SWITCH

Being a diversity switch allows for seamless switching between different input sources, making it ideal for systems requiring signal diversity or redundancy.

Minimum Isolation: 20 dB

High isolation ensures minimal interference between input/output ports, enhancing signal purity and overall system performance.

Minimum Operating Frequency: 2500 MHz

Low minimum operating frequency allows the switch to handle a wide range of frequencies, making it suitable for diverse RF/microwave applications.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure installation on circuit boards, saving space and simplifying the integration of the switch into systems.

Maximum Operating Frequency: 8000 MHz

High maximum operating frequency ensures the switch can handle a wide range of high-frequency signals, making it versatile for various RF/microwave applications.

Technical Specifications

RF/Microwave Switches NSG1001MXT1G attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

27 dBm

Construction:

COMPONENT

Maximum Insertion Loss:

.95 dB

Minimum Isolation:

20 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

8000 MHz

Minimum Operating Frequency:

2500 MHz

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.04,14

RF or Microwave Device Type:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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