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NSG1002MXT1G

Onsemi

NSG1002MXT1G by Onsemi

NSG1002MXT1G by Onsemi is an SP3T RF/Microwave switch with a compression point of 30 dBm and min isolation of 20 dB. It operates at temperatures ranging from -40 °C to 105°C, making it suitable for various applications in the RF/Microwave field. With a max insertion loss of 0.95 dB and surface mounting feature, it offers reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,391 parts In-Stock

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Vyrian

USA . 2,084 parts In-Stock

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2,084

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Kulean Microsystems

USA . 6,436 parts In-Stock

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SupplyDigital Components

Austria . 5,199 parts In-Stock

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Problanco Electronics

Mexico . 2,183 parts In-Stock

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Corphita

USA . 1,448 parts In-Stock

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TANS Electronics

Latvia . 1,255 parts In-Stock

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UHIMA Technologies

Türkiye . 443 parts In-Stock

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Corohmni

South Africa . 285 parts In-Stock

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Overview

Experience superior performance and reliability with the NSG1002MXT1G by Onsemi. As a leading manufacturer in the industry, Onsemi's RF/Microwave Switches are known for their exceptional quality and durability. This SP3T switch offers seamless switching capabilities for a wide range of applications, ensuring optimal performance in every use. With a maximum insertion loss of 0.95 dB and minimum isolation of 20 dB, this component guarantees high efficiency and precision. Trust Onsemi to deliver cutting-edge solutions that provide unmatched value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for applications where weight is a concern.

Compression Point (1 dB): 30 dBm

With a high compression point, this switch can handle high power levels without distortion, ensuring reliable performance in demanding RF/microwave environments.

Construction: COMPONENT

The component construction of this product ensures high reliability and consistency in performance, making it suitable for long-term use in various applications.

Power Supplies (V): 3

Operating at a low voltage of 3V makes this switch energy efficient and suitable for battery-powered applications.

No. of Terminals: 8

With 8 terminals, this switch offers flexibility in signal routing and connectivity options, making it versatile for different system configurations.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature allows this switch to perform reliably in extreme temperature conditions, expanding its range of use.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures this switch can function effectively even in cold environments, making it suitable for a wide range of applications.

Maximum Insertion Loss: 0.95 dB

With a low insertion loss, this switch minimizes signal loss when routing RF/microwave signals, ensuring high signal integrity and quality.

RF or Microwave Device Type: SP3T

As a SP3T switch, this product provides flexibility in signal routing with three possible output paths, making it ideal for applications requiring signal switching.

Minimum Isolation: 20 dB

The high minimum isolation ensures minimal signal interference between the input and output ports, improving signal quality and preventing signal leakage.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration into PCBs, saving space and making it easy to incorporate into compact electronic designs.

Technical Specifications

RF/Microwave Switches NSG1002MXT1G attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

30 dBm

Construction:

COMPONENT

Maximum Insertion Loss:

.95 dB

Minimum Isolation:

20 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC8,.06,16

Power Supplies (V):

3

RF or Microwave Device Type:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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