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SN74LS602AN3

Texas Instruments

SN74LS602AN3 by Texas Instruments

SN74LS602AN3 by Texas Instruments is a Memory Controller with 16K X 1 memory organization, TTL technology, and 7-bit address bus width. It operates at temperatures b/w 0-70 °C and requires a supply voltage of 4.75-5.25 V. Ideal for DRAM applications due to its through-hole terminal form and commercial temperature grade suitability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,453 parts In-Stock

1+ parts

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3,453

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Digiode

USA . 2,738 parts In-Stock

1+ parts

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2,738

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 497 parts In-Stock

1+ parts

$8.415

100+ parts

-

1k+ parts

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497

$8.415

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Corohmni

South Africa . 4,912 parts In-Stock

1+ parts

$20.034

100+ parts

-

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4,912

$20.034

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Parana Technologies

USA . 743 parts In-Stock

1+ parts

$30.054

100+ parts

-

1k+ parts

$66.501

10k+ parts

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743

$30.054

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$66.501

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One Stop Electronics

USA . 1,598 parts In-Stock

1+ parts

$33.000

100+ parts

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1,598

$33.000

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DigiPath Technology Company

USA . 2,099 parts In-Stock

1+ parts

$33.093

100+ parts

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2,099

$33.093

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ChromeModa Solutions

Germany . 2,803 parts In-Stock

1+ parts

$33.768

100+ parts

$27.690

1k+ parts

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2,803

$33.768

$27.690

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IDEA Electronic Components Group

UK . 387 parts In-Stock

1+ parts

$33.768

100+ parts

$32.080

1k+ parts

$30.391

10k+ parts

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387

$33.768

$32.080

$30.391

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Corphita

USA . 2,488 parts In-Stock

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2,488

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Overview

Unlock the power of efficient memory control with the SN74LS602AN3 by Texas Instruments. Crafted with precision and reliability, this memory controller offers seamless performance for a wide range of applications. From enhancing data processing speed to optimizing storage capabilities, this product delivers unmatched value and benefits to customers seeking high-quality solutions. Elevate your projects with the superior technology and innovation that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Maximum Supply Voltage: 5.25 V

Ability to handle a higher supply voltage provides flexibility in various power supply configurations.

Address Bus Width: 7

Having a wider address bus width allows for efficient data transfer and processing.

Package Shape: RECTANGULAR

Rectangular package shape ensures compatibility with standard mounting configurations.

Power Supplies (V): 5

The product operates efficiently with a standard power supply voltage of 5 volts.

No. of Terminals: 20

Sufficient number of terminals for connecting to other components and peripherals.

Package Style (Meter): IN-LINE

In-line package style allows for easy integration into existing circuit layouts.

Minimum Supply Voltage: 4.75 V

Ability to operate at lower supply voltages provides energy efficiency and flexibility in power sources.

Maximum Operating Temperature: 70 °C

The product can withstand high operating temperatures, ensuring reliable performance in various environments.

Minimum Operating Temperature: 0 °C

Wide temperature range allows the product to function in both high and low temperature conditions.

Terminal Position: DUAL

Dual terminal position enhances connectivity and flexibility in circuit layouts.

Maximum Seated Height: 5.08 mm

Low seated height makes the product suitable for applications with space constraints.

Width: 7.62 mm

Compact width dimensions make the product versatile and easy to incorporate into designs.

Length: 24.325 mm

Optimal length size for fitting within standard enclosures and layouts.

Temperature Grade: COMMERCIAL

Commercial grade temperature rating ensures compatibility with standard operating conditions.

Peripheral IC Type: MEMORY CONTROLLER, DRAM

Integrated memory controller and DRAM technology provide efficient memory management and data processing capabilities.

Technology: TTL

TTL technology offers fast switching speeds and reliable performance for memory control operations.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy and secure connections on PCBs.

Maximum Supply Current: 85 mA

Low supply current requirement ensures efficient power consumption and heat dissipation.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5 volts ensures consistent and stable operation.

Memory Organization: 16K X 1

The organizational structure of 16K X 1 provides efficient memory storage and retrieval capabilities.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for easy integration and connectivity with other components.

Technical Specifications

Memory Controllers SN74LS602AN3 attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

7

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-PDIP-T20

Length:

24.325 mm

Low Power Mode:

NO

Memory Organization:

16K X 1

No. of Banks:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Memory Controllers

Maximum Supply Current:

85 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Peripheral IC Type:

Trade Compliance

SN74LS602AN3 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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