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SNJ54ALS6301JD

Texas Instruments

SNJ54ALS6301JD by Texas Instruments

SNJ54ALS6301JD by Texas Instruments is a MILITARY-grade MEMORY CONTROLLER IC with 20-bit Address Bus, 5V Nominal Voltage, and 4 Banks. It operates b/w -55°C to 125°C, has 52 Terminals in IN-LINE package style, and draws a max of 220 mA supply current. Ideal for DRAM applications requiring high reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,988 parts In-Stock

1+ parts

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4,988

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Digiode

USA . 1,975 parts In-Stock

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1,975

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 339 parts In-Stock

1+ parts

$9.000

100+ parts

-

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339

$9.000

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AZTECH Wire

Italy . 436 parts In-Stock

1+ parts

$10.206

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436

$10.206

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Corohmni

South Africa . 185 parts In-Stock

1+ parts

$43.626

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185

$43.626

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Parana Technologies

USA . 1,730 parts In-Stock

1+ parts

$56.779

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1,730

$56.779

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ChromeModa Solutions

Germany . 2,685 parts In-Stock

1+ parts

$63.797

100+ parts

$52.314

1k+ parts

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2,685

$63.797

$52.314

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IDEA Electronic Components Group

UK . 1,830 parts In-Stock

1+ parts

$63.797

100+ parts

$60.607

1k+ parts

$57.417

10k+ parts

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1,830

$63.797

$60.607

$57.417

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Corphita

USA . 2,291 parts In-Stock

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2,291

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DigiPath Technology Company

USA . 2,226 parts In-Stock

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$57.519

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2,226

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$57.519

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Overview

Elevate your electronic projects to the next level with the SNJ54ALS6301JD by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-quality products that meet the highest standards. This memory controller is versatile and reliable, making it ideal for a wide range of applications. With its excellent performance and durability, this product offers unmatched value and benefits to customers. Upgrade your designs with confidence using the SNJ54ALS6301JD.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and thermal stability, ensuring reliable performance in various operating conditions.

Address Bus Width: 20

With a wide 20-bit address bus width, this memory controller can efficiently handle large volumes of data, making it suitable for high-performance applications.

Screening Level: 38535Q/M; 38534H; 883B

The military-grade screening levels ensure that this memory controller meets stringent quality and reliability standards, making it ideal for mission-critical military or aerospace applications.

Power Supplies (V): 5

Operating at a standard voltage of 5V, this memory controller is compatible with a wide range of systems and can be easily integrated without the need for additional power conversion.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this memory controller can function reliably even in demanding thermal conditions, ensuring stable performance in harsh environments.

Technology: TTL

Utilizing TTL technology, this memory controller offers fast and reliable data transmission, making it suitable for applications that require high-speed processing and low signal noise.

Technical Specifications

Memory Controllers SNJ54ALS6301JD attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

20

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-CDIP-T52

Low Power Mode:

NO

No. of Banks:

4

No. of Terminals:

52

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP52,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Memory Controllers

Maximum Supply Current:

220 mA

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Peripheral IC Type:

Trade Compliance

SNJ54ALS6301JD Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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