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SNJ54ALS2968JD

Texas Instruments

SNJ54ALS2968JD by Texas Instruments

SNJ54ALS2968JD by Texas Instruments is a MILITARY-grade MEMORY CONTROLLER with 1M X 16 Memory Organization. It operates b/w -55 to 125 °C, with Address Bus Width of 18 and Max Supply Voltage of 5.5 V. This IC is ideal for applications requiring high-performance memory control in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,689 parts In-Stock

1+ parts

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6,689

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Digiode

USA . 4,639 parts In-Stock

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-

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4,639

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 840 parts In-Stock

1+ parts

$13.615

100+ parts

-

1k+ parts

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840

$13.615

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Parana Technologies

USA . 2,047 parts In-Stock

1+ parts

$16.423

100+ parts

-

1k+ parts

$16.717

10k+ parts

-

2,047

$16.423

-

$16.717

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DigiPath Technology Company

USA . 718 parts In-Stock

1+ parts

$18.084

100+ parts

-

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718

$18.084

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ChromeModa Solutions

Germany . 859 parts In-Stock

1+ parts

$18.453

100+ parts

$15.131

1k+ parts

-

10k+ parts

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859

$18.453

$15.131

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IDEA Electronic Components Group

UK . 167 parts In-Stock

1+ parts

$18.453

100+ parts

$17.530

1k+ parts

$16.608

10k+ parts

-

167

$18.453

$17.530

$16.608

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One Stop Electronics

USA . 390 parts In-Stock

1+ parts

$23.000

100+ parts

-

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390

$23.000

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Corohmni

South Africa . 2,993 parts In-Stock

1+ parts

$40.860

100+ parts

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2,993

$40.860

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Corphita

USA . 1,761 parts In-Stock

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1,761

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Overview

Unlock the power of advanced memory control with the SNJ54ALS2968JD by Texas Instruments. Crafted with precision and expertise, this cutting-edge device offers unparalleled reliability and performance. Perfect for a wide range of applications, this memory controller provides seamless integration and exceptional functionality. Experience the value and benefits of Texas Instruments' superior technology with the SNJ54ALS2968JD, where quality meets innovation to elevate your projects to new heights. Elevate your projects to new heights with the SNJ54ALS2968JD by Texas Instruments!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides durability and reliability, making the product suitable for harsh environments.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, the product is versatile and can be used in a variety of applications.

Address Bus Width: 18

The wide address bus width allows for efficient data transfer and processing, enhancing the performance of the memory controller.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures quality and reliability, meeting industry standards for military-grade applications.

Power Supplies (V): 5

The consistent power supply ensures stable operation and performance of the memory controller.

No. of Terminals: 48

The ample number of terminals allows for easy connections and integration within a system.

Memory Organization: 1M X 16

The memory organization of 1M X 16 provides high memory density and efficient data storage capabilities.

Technical Specifications

Memory Controllers SNJ54ALS2968JD attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

18

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-CDIP-T48

Low Power Mode:

NO

Memory Organization:

1M X 16

No. of Banks:

4

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP48,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Memory Controllers

Maximum Supply Current:

200 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Peripheral IC Type:

Trade Compliance

SNJ54ALS2968JD Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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