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SN74ALVC7806-40DLR

Texas Instruments

SN74ALVC7806-40DLR by Texas Instruments

SN74ALVC7806-40DLR by Texas Instruments is a FIFO with 256x18 organization, 40ns cycle time, and 25MHz clock frequency. It operates at 3.3V, suitable for commercial applications requiring fast data storage and retrieval in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,275 parts In-Stock

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Digiode

USA . 4,499 parts In-Stock

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4,499

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Distributors (Availability)

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Parana Technologies

USA . 1,868 parts In-Stock

1+ parts

$2.193

100+ parts

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$2.703

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1,868

$2.193

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$2.703

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DigiPath Technology Company

USA . 2,242 parts In-Stock

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$2.415

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$2.222

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$2.415

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ChromeModa Solutions

Germany . 4,738 parts In-Stock

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$2.464

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$2.020

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4,738

$2.464

$2.020

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IDEA Electronic Components Group

UK . 285 parts In-Stock

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$2.464

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$2.218

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285

$2.464

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$2.218

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AZTECH Wire

Italy . 875 parts In-Stock

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$12.496

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875

$12.496

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Ampacity Inc.

Singapore . 470 parts In-Stock

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$19.000

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470

$19.000

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One Stop Electronics

USA . 947 parts In-Stock

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$30.000

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$30.000

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Component Stockers USA

USA . 481 parts In-Stock

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$99.990

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Corphita

USA . 4,863 parts In-Stock

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Microchip USA

USA . 287 parts In-Stock

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Overview

Elevate your electronics projects with the SN74ALVC7806-40DLR by Texas Instruments. This high-quality FIFO memory IC offers reliable performance and versatility for a wide range of applications. With its compact design and synchronous operating mode, this product ensures seamless data transfer at a cycle time of 40 ns. Experience the value of Texas Instruments' expertise in semiconductor technology with this innovative solution, providing customers with the benefits of efficiency, speed, and reliability. Choose the SN74ALVC7806-40DLR for your next project and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Cycle Time: 40 ns

Fast cycle time of 40 ns ensures efficient data transfer and processing, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V allows for compatibility with a wide range of systems and components.

No. of Terminals: 56

Having 56 terminals provides ample connectivity options, making it suitable for complex data transfer requirements.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this FIFO can withstand high temperature environments without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the FIFO.

Memory Width: 18

A memory width of 18 bits allows for efficient storage and retrieval of data, making this FIFO suitable for handling large amounts of information.

Maximum Access Time: 20 ns

A fast maximum access time of 20 ns ensures quick retrieval of data, making this FIFO ideal for time-sensitive applications.

Technical Specifications

FIFO SN74ALVC7806-40DLR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

Maximum Clock Frequency (fCLK):

25 MHz

Cycle Time:

40 ns

JESD-30 Code:

R-PDSO-G56

Length:

18.415 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

56

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP56,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

SN74ALVC7806-40DLR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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