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SN74ACT2236-20FNR

Texas Instruments

SN74ACT2236-20FNR by Texas Instruments

SN74ACT2236-20FNR by Texas Instruments is a 2Kx9 FIFO chip with 20ns cycle time, operating at 5V. It features synchronous operation, 3-STATE output characteristics, and a memory density of 18432 bits. Ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,483 parts In-Stock

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2,483

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Vyrian

USA . 2,003 parts In-Stock

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2,003

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 283 parts In-Stock

1+ parts

$1.937

100+ parts

-

1k+ parts

$2.472

10k+ parts

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283

$1.937

-

$2.472

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ChromeModa Solutions

Germany . 3,192 parts In-Stock

1+ parts

$2.176

100+ parts

$1.784

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3,192

$2.176

$1.784

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IDEA Electronic Components Group

UK . 2,085 parts In-Stock

1+ parts

$2.176

100+ parts

-

1k+ parts

$1.958

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2,085

$2.176

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$1.958

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AZTECH Wire

Italy . 676 parts In-Stock

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$8.797

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676

$8.797

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One Stop Electronics

USA . 636 parts In-Stock

1+ parts

$12.000

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636

$12.000

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Corphita

USA . 4,535 parts In-Stock

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4,535

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DigiPath Technology Company

USA . 2,118 parts In-Stock

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100+ parts

$1.962

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2,118

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$1.962

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Overview

Unlock the power of seamless data transfer with the Texas Instruments SN74ACT2236-20FNR FIFO chip carrier. Designed for high-performance applications, this synchronous FIFO device offers a cycle time of 20ns and a memory density of 18432 bits, ensuring fast and efficient data processing. With a wide operating temperature range and 3-state output characteristics, this versatile chip is ideal for a variety of commercial-grade projects. Trust in Texas Instruments' reputation for quality and reliability, and experience the value and benefits of the SN74ACT2236-20FNR for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Cycle Time: 20 ns

With a fast cycle time of 20 ns, this FIFO product ensures efficient and quick data transfer operations.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage of 5V, making it compatible with various systems and easy to power.

Output Characteristics: 3-STATE

The 3-STATE output characteristics provide flexibility in controlling the output signals, enhancing the versatility of the product.

Technology: CMOS

Being based on CMOS technology, this FIFO product consumes low power and offers high noise immunity, making it energy-efficient and reliable.

Technical Specifications

FIFO SN74ACT2236-20FNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

IT CAN OPERATES ASYNCHRONOUS MODE ALSO

Cycle Time:

20 ns

JESD-30 Code:

S-PQCC-J44

Length:

16.5862 mm

Memory Density:

18432 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

16.5862 mm

Trade Compliance

SN74ACT2236-20FNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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