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MSP430F6766IPZR

Texas Instruments

MSP430F6766IPZR by Texas Instruments

MSP430F6766IPZR by Texas Instruments is a 16-bit microprocessor with 262144 ROM words and 16384 RAM bytes. Operating at up to 25 MHz, it is ideal for industrial applications requiring a max supply voltage of 3.6 V. This CMOS technology-based IC supports I2C, SPI, and UART bus compatibility in a compact square package with low profile and fine pitch terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,627 parts In-Stock

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Digiode

USA . 3,394 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 372 parts In-Stock

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$4.000

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372

$4.000

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AZTECH Wire

Italy . 826 parts In-Stock

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$13.848

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Corohmni

South Africa . 2,950 parts In-Stock

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$38.605

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Parana Technologies

USA . 1,125 parts In-Stock

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$49.396

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DigiPath Technology Company

USA . 1,414 parts In-Stock

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$54.391

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ChromeModa Solutions

Germany . 4,114 parts In-Stock

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$55.501

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$45.511

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$55.501

$45.511

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IDEA Electronic Components Group

UK . 857 parts In-Stock

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$55.501

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$52.726

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$49.951

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857

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Component Stockers USA

USA . 355 parts In-Stock

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$99.990

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Corphita

USA . 1,894 parts In-Stock

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Microchip USA

USA . 139 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MSP430F6766IPZR from Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments brings reliability and innovation to the table. This versatile microprocessor circuit is perfect for a wide range of applications, providing seamless performance and exceptional efficiency. With its advanced features and industrial-grade quality, the MSP430F6766IPZR offers unmatched value and benefits to customers looking to elevate their projects to the next level. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good durability and protection for the integrated circuits inside.

Surface Mount: YES

Surface mount capability makes it easier to integrate the IC into various electronic devices and PCB designs.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for flexibility in different power supply configurations.

Bit Size: 16

The 16-bit size provides a good balance between performance and efficiency for processing data.

No. of Terminals: 100

Having 100 terminals allows for versatile connectivity options and compatibility with various peripheral devices.

ROM Words: 262144

The large ROM capacity of 262144 words allows for storing a significant amount of program data and instructions.

RAM Bytes: 16384

The 16384 bytes of RAM provide ample memory for temporary data storage and efficient processing.

Maximum Clock Frequency: 25 MHz

The high maximum clock frequency of 25 MHz enables fast and efficient operation for time-sensitive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Being a microprocessor circuit, this product can perform various data processing and control functions efficiently.

ROM Programmability: FLASH

The flash programmability of the ROM allows for easy reprogramming and updating of the firmware as needed.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MSP430F6766IPZR attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bit Size:

16

Bus Compatibility:

I2C; SPI; UART

CPU Family:

MSP430

Maximum Clock Frequency:

25 MHz

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e4

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

11.75 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

MSP430F6766IPZR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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