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DM3725CBCD100

Texas Instruments

DM3725CBCD100 by Texas Instruments

The Texas Instruments DM3725CBCD100 microprocessor features a 32-bit architecture with 25-bit address bus width and integrated cache. Operating at a max clock frequency of 54 MHz, it is suitable for applications requiring low power mode and high-speed processing. With a package style of grid array, this CMOS technology-based processor offers peripheral IC type as RISC for efficient performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,234 parts In-Stock

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Digiode

USA . 2,539 parts In-Stock

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2,539

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Distributors (Availability)

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Native Components

USA . 749 parts In-Stock

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$1.293

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749

$1.293

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Northwest PG Solutions

USA . 181 parts In-Stock

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$1.423

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$1.423

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One Stop Electronics

USA . 572 parts In-Stock

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$7.000

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572

$7.000

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AZTECH Wire

Italy . 784 parts In-Stock

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$14.597

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Parana Technologies

USA . 1,953 parts In-Stock

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$67.082

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$67.082

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DigiPath Technology Company

USA . 1,328 parts In-Stock

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$73.866

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$67.956

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ChromeModa Solutions

Germany . 3,079 parts In-Stock

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$75.373

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$61.806

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IDEA Electronic Components Group

UK . 84 parts In-Stock

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$75.373

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$71.604

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$67.836

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84

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$67.836

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Component Stockers USA

USA . 744 parts In-Stock

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$99.990

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Microchip USA

USA . 10,910 parts In-Stock

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Corphita

USA . 4,116 parts In-Stock

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Overview

Experience the power of cutting-edge technology with the DM3725CBCD100 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers exceptional quality and reliability, making this microprocessor the top choice for a wide range of applications. With integrated cache, low power mode, and a maximum clock frequency of 54 MHz, this product offers unparalleled performance and efficiency. Whether you're working on industrial automation, robotics, or telecommunications, the DM3725CBCD100 provides the value, benefits, and advantages you need to take your projects to the next level. Unlock endless possibilities with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microprocessor, ensuring long-term reliability.

Integrated Cache: YES

Having an integrated cache improves performance by allowing the processor to access frequently used data quickly, enhancing overall speed and efficiency.

Surface Mount: YES

Surface mount technology allows for easy installation and compact design, making it suitable for space-constrained applications.

Maximum Supply Voltage: 1.2 V

The low maximum supply voltage helps in reducing power consumption and heat generation, leading to energy efficiency.

Address Bus Width: 25

A wider address bus allows the processor to access a larger memory space, enabling it to handle more complex tasks and data.

Package Shape: SQUARE

Square package shape ensures efficient use of space and easy integration into circuit boards.

Bit Size: 32

A 32-bit architecture allows for handling larger chunks of data in a single operation, improving processing speed and efficiency.

Power Supplies (V): 1.2,3.3

Support for multiple power supply options provides flexibility in design and compatibility with various voltage requirements.

No. of Terminals: 515

A higher number of terminals allow for more connections and functionalities, making the microprocessor versatile in different applications.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This package style offers high density, reduced footprint, and reliable connections for optimized performance in compact devices.

Minimum Supply Voltage: 1.08 V

The low minimum supply voltage ensures stable operation even under low power conditions, enhancing the reliability of the microprocessor.

Terminal Position: BOTTOM

Bottom terminal position simplifies and improves the process of mounting and soldering the microprocessor onto a circuit board.

Maximum Seated Height: 1 mm

The low seated height allows for a thinner and more streamlined design, suitable for applications with space constraints.

RAM Words: 16384

Having a large RAM size enables the microprocessor to store and access more data quickly, enhancing multitasking capabilities and overall performance.

Width: 14 mm

Compact width enables easy integration into various devices without occupying excessive space on the circuit board.

Boundary Scan: YES

Boundary scan capability facilitates testing and debugging during manufacturing and maintenance, ensuring efficient production and troubleshooting processes.

External Data Bus Width: 16

A wider external data bus allows for faster data transfer between the microprocessor and external components, optimizing performance and efficiency.

Maximum Clock Frequency: 54 MHz

The high clock frequency enables fast processing speed, making the microprocessor suitable for demanding applications that require rapid data processing.

Maximum Time At Peak Reflow Temperature (s): 30

The specified reflow temperature and time ensure proper soldering and reliability during the manufacturing process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for secure and stable solder joints, ensuring long-term performance reliability.

Length: 14 mm

Compact length facilitates easy integration into various devices, making it suitable for small form factor applications.

Peripheral IC Type: MICROPROCESSOR, RISC

RISC architecture offers simplified instructions and faster processing, making the microprocessor efficient for specific computing tasks.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance, making the microprocessor energy-efficient and suitable for battery-operated devices.

Terminal Form: BALL

Ball terminal form allows for reliable connections and easier installation, ensuring secure integration into circuit boards.

Maximum Supply Current: 37 mA

Low supply current consumption helps in reducing power usage and heat generation, contributing to energy efficiency and prolonged battery life.

Nominal Supply Voltage: 1.14 V

The specified nominal supply voltage ensures stable operation and compatibility with standard power sources, enhancing the reliability of the microprocessor.

Terminal Pitch: 0.5 mm

The narrow terminal pitch allows for high-density connections and compact design, making the microprocessor suitable for small form factor devices.

Format: FLOATING POINT

Support for floating-point operations enables the microprocessor to handle complex mathematical calculations with precision and efficiency.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, requiring proper handling and storage to maintain the performance and reliability of the microprocessor.

Speed: 1000 rpm

The specified speed rating ensures optimal performance in applications where rotational speed is a critical factor, such as cooling systems or fan control.

Low Power Mode: YES

Support for low power mode allows for energy-saving operation, extending battery life and reducing overall power consumption in devices.

Technical Specifications

Microprocessors DM3725CBCD100 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

25

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

54 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

515

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA515,21X21,25

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Words:

16384

Maximum Seated Height:

1 mm

Speed:

1000 rpm

Sub-Category:

Digital Signal Processors

Maximum Supply Current:

37 mA

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.14 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

DM3725CBCD100 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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