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CD54HCT356H

Texas Instruments

CD54HCT356H by Texas Instruments

CD54HCT356H by Texas Instruments is an 8-input multiplexer with a propagation delay of 89ns. Operating at a supply voltage range of 4.5V to 5.5V, it is designed for military-grade applications with a temperature range from -55°C to 125°C. This surface-mount chip features complementary output polarity and a total of 20 terminals in an unencased package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 4,601 parts In-Stock

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Digiode

USA . 2,785 parts In-Stock

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Northwest PG Solutions

USA . 281 parts In-Stock

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$3.333

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One Stop Electronics

USA . 1,103 parts In-Stock

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AZTECH Wire

Italy . 898 parts In-Stock

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Parana Technologies

USA . 77 parts In-Stock

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$1,006.181

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$9.751

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DigiPath Technology Company

USA . 239 parts In-Stock

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$11.931

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ChromeModa Solutions

Germany . 849 parts In-Stock

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IDEA Electronic Components Group

UK . 412 parts In-Stock

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Corphita

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Supply Digital

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Native Components

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Overview

Unlock the power of versatile signal routing with the Texas Instruments CD54HCT356H multiplexer & demultiplexer. Manufactured by a trusted industry leader, this high-quality product offers 8 inputs, precise 3-STATE output characteristics, and a wide temperature range for military-grade applications. With a compact surface-mount design and fast propagation delay, this chip provides seamless integration and reliable performance. Experience the value of enhanced signal processing and efficiency with the CD54HCT356H from Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto printed circuit boards, making this product ideal for electronic manufacturing processes.

No. of Inputs: 8

Having 8 inputs provides versatility and flexibility in multiplexing and demultiplexing multiple signals or data streams.

Nominal Supply Voltage: 5V

A standard supply voltage of 5V ensures compatibility with common electronic systems and power sources.

Propagation Delay: 89ns

Low propagation delay of 89ns enables fast switching and response times for efficient signal processing.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand harsh environmental conditions and extended usage.

Output Characteristics: 3-STATE

The 3-STATE output feature provides the ability to drive multiple loads or bus structures, enhancing the versatility of the product.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems, making it a reliable choice for multiplexing applications.

Technical Specifications

Multiplexer & Demultiplexer CD54HCT356H attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Additional Features:

TRANSPARENT ADDRESS LATCHES; REGISTERED DATA INPUTS

Family:

HCT

JESD-30 Code:

X-XUUC-N20

Logic IC Type:

No. of Functions:

1

No. of Inputs:

8

No. of Outputs:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

COMPLEMENTARY

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Propagation Delay (tpd):

89 ns

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

UPPER

Trade Compliance

CD54HCT356H Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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