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CD54HC157F3A

Texas Instruments

CD54HC157F3A by Texas Instruments

CD54HC157F3A by Texas Instruments is a CMOS multiplexer with 4 functions, 2 inputs, and 2 bits. It has a propagation delay of 10 ns at 4.5V supply voltage. Ideal for military applications due to its MIL-Grade temperature range and glass-sealed ceramic package.

Median Price

$12.450

Lifecycle Status

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Rochester

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Freelance Electronics

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Digiode

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Vyrian

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PC Components Company LLC

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Speed Components Ltd

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Electronics Depot

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ComSIT Distribution GmbH

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Manoshevitz Elec. Sales

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Native Components

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Northwest PG Solutions

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Corphita

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Parana Technologies

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 4,458 parts In-Stock

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IDEA Electronic Components Group

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QUARKTWIN TECHNOLOGY LTD

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Overview

Unleash the power of seamless signal routing with the CD54HC157F3A by Texas Instruments. Designed with precision and reliability in mind, this multiplexer/demultiplexer offers unparalleled performance in a variety of applications. Whether you're looking to streamline your circuit designs or enhance signal processing efficiency, this versatile component delivers unmatched value and benefits. Trust in Texas Instruments' reputation for quality and innovation, and experience the advantages that the CD54HC157F3A brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides excellent durability and reliability, making the product suitable for various environmental conditions.

Propagation Delay At Nominal Supply: 10 ns

The low propagation delay ensures fast and efficient data processing, making this product ideal for high-speed applications.

No. of Functions: 4

Having multiple functions in a single device helps save space and simplify circuit design.

Screening Level: 38535Q/M;38534H;883B

The screening level indicates that the product meets stringent quality standards and is suitable for military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 4.5

The nominal supply voltage of 4.5V provides a stable power source for the device to operate efficiently.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperatures, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Multiplexer & Demultiplexer CD54HC157F3A attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Bits:

2

No. of Functions:

4

No. of Inputs:

2

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

190 ns

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD54HC157F3A Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-259-8918, 5962012598918

NIIN

012598918

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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