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SN74CBT3251DBR

Texas Instruments

SN74CBT3251DBR by Texas Instruments

SN74CBT3251DBR by Texas Instruments is a 16-terminal CMOS multiplexer with 0.24 ns propagation delay, 50 pF load capacitance, and 3-STATE output characteristics. Ideal for industrial applications requiring fast signal switching in a compact package with surface mount capability.

Median Price

$0.539

Lifecycle Status

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Mouser Electronics

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$0.840

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$0.478

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Rochester

USA . 8,000 parts In-Stock

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$0.470

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$0.348

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DigiKey

USA . 8,000 parts In-Stock

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Verical

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Digiode

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Nova Conductors

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Bristol Electronics

USA . 1,347 parts In-Stock

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Dan-Mar Components

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Corphita

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Corohmni

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Component Stockers USA

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Microchip USA

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Overview

Unlock the power of seamless data transfer with the Texas Instruments SN74CBT3251DBR multiplexer & demultiplexer. Manufactured to the highest quality standards, this versatile device offers ultra-fast propagation delay, 3-STATE output characteristics, and a wide operating temperature range suitable for industrial applications. Whether you need to switch between multiple inputs or distribute signals efficiently, this compact and reliable component provides unmatched value, performance, and reliability. Upgrade your electronic systems with the SN74CBT3251DBR and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the multiplexer/demultiplexer.

Propagation Delay At Nominal Supply: 0.24 ns

Low propagation delay ensures fast data processing and minimal delays in signal transmission.

Surface Mount: YES

Surface mount capability allows for easy installation onto printed circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable voltage level of 5V, making it compatible with a wide range of systems and applications.

Load Capacitance (CL): 50 pF

Suitable load capacitance ensures optimal performance and signal integrity in various circuit configurations.

Output Characteristics: 3-STATE

3-state outputs provide flexibility in controlling signal flow and enable efficient sharing of output lines with multiple devices.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environmental conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall efficiency and reliability of the multiplexer/demultiplexer.

Technical Specifications

Multiplexer & Demultiplexer SN74CBT3251DBR attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE MUX/DMUX SWITCH

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

6.2 mm

Load Capacitance (CL):

50 pF

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Outputs:

8

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.003 mA

Propagation Delay At Nominal Supply:

.24 ns

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.3 mm

Trade Compliance

SN74CBT3251DBR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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