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CD54AC153F3A

Texas Instruments

CD54AC153F3A by Texas Instruments

CD54AC153F3A by Texas Instruments is a CMOS multiplexer with 2 functions, 4 inputs, and 4 bits. It operates at a nominal voltage of 3.3V and has a propagation delay of 18.6ns. Ideal for military-grade applications requiring high-speed data switching in compact designs.

Median Price

$13.018

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Arrow

USA . 275 parts In-Stock

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$13.018

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Vyrian

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Digiode

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Resion

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Manoshevitz Elec. Sales

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Electronic Expediters

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Native Components

USA . 759 parts In-Stock

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$0.567

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Northwest PG Solutions

USA . 32 parts In-Stock

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$0.624

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Parana Technologies

USA . 765 parts In-Stock

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$24.701

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$2,293.868

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$22.231

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DigiPath Technology Company

USA . 1,396 parts In-Stock

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$27.199

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$25.023

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ChromeModa Solutions

Germany . 5,316 parts In-Stock

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IDEA Electronic Components Group

UK . 1,712 parts In-Stock

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Corphita

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Glotronic Ltd.

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Microchip USA

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Overview

Upgrade your electronic designs with the CD54AC153F3A by Texas Instruments, a top-tier manufacturer known for their quality and reliability. This multiplexer & demultiplexer offers unparalleled performance in a compact package, making it ideal for a wide range of applications. With its fast propagation delay and low power consumption, this versatile component provides exceptional value to customers looking to enhance their systems. Trust Texas Instruments for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Propagation Delay At Nominal Supply: 18.6 ns

Low propagation delay ensures fast processing of signals, making this product ideal for high-speed applications.

No. of Functions: 2

Having multiple functions in one device saves space and simplifies circuit design, making it a versatile choice.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards, optimizing space usage.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level commonly used in electronic systems, ensuring compatibility with various devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in harsh environmental conditions or industrial settings.

Technical Specifications

Multiplexer & Demultiplexer CD54AC153F3A attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

AC

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Bits:

4

No. of Functions:

2

No. of Inputs:

4

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

18.6 ns

Propagation Delay (tpd):

166 ns

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CD54AC153F3A Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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