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CD54HC157F

Texas Instruments

CD54HC157F by Texas Instruments

CD54HC157F by Texas Instruments is a CMOS multiplexer with 4 functions, 2 inputs, and 2 bits. It has a propagation delay of 10 ns at nominal voltage of 4.5V. Ideal for military applications due to its wide operating temperature range from -55°C to 125°C.

Median Price

$11.525

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 69 parts In-Stock

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-

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$9.220

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$8.250

10k+ parts

$7.770

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$7.770

DigiKey

USA . 69 parts In-Stock

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$12.140

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Verical

USA . 69 parts In-Stock

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$11.525

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$10.313

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$9.713

69

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$9.713

Distributors (In-Stock)

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Digiode

USA . 1,869 parts In-Stock

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$8.464

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Vyrian

USA . 6,308 parts In-Stock

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Sogenti Electronics

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DigiKey Marketplace

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Electronic Expediters

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ComSIT Distribution GmbH

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Eagle Technology Solutions

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ECAB

Sweden . 25 parts In-Stock

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LWI Electronics Inc

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Native Components

USA . 749 parts In-Stock

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$0.703

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Northwest PG Solutions

USA . 1,245 parts In-Stock

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Corphita

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Parana Technologies

USA . 246 parts In-Stock

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$14.716

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$1,366.618

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$13.245

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DigiPath Technology Company

USA . 2,297 parts In-Stock

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$16.204

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$14.908

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ChromeModa Solutions

Germany . 5,555 parts In-Stock

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IDEA Electronic Components Group

UK . 1,722 parts In-Stock

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$15.708

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$14.882

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QUARKTWIN TECHNOLOGY LTD

USA . 8,345 parts In-Stock

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Microchip USA

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Supply Digital

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Infinite Electronics LLP (Excess)

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Overview

Enhance your electronic projects with the Texas Instruments CD54HC157F multiplexer and demultiplexer. Crafted with precision using top-quality materials, this component offers fast propagation delay and reliable performance. With a multitude of applications in signal routing and data processing, this versatile device ensures seamless operation. Trust in Texas Instruments' reputation for excellence and invest in the CD54HC157F for unmatched quality and value in your circuit designs. Upgrade your projects today with this superior component.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures durability and reliability, making this product suitable for harsh environmental conditions.

Propagation Delay At Nominal Supply: 10 ns

The low propagation delay at nominal supply ensures fast operation and efficient data processing, making this product ideal for high-speed applications.

No. of Functions: 4

With multiple functions available in a single device, this product is versatile and can handle complex multiplexing and demultiplexing tasks efficiently.

Nominal Supply Voltage / Vsup (V): 4.5

The nominal supply voltage of 4.5V ensures compatibility with a wide range of systems, making this product versatile and easy to integrate.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows this product to function reliably in a variety of environments, including industrial and military settings.

Technical Specifications

Multiplexer & Demultiplexer CD54HC157F attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Bits:

2

No. of Functions:

4

No. of Inputs:

2

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

190 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD54HC157F Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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