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CC430F6143IRGC

Texas Instruments

CC430F6143IRGC by Texas Instruments

CC430F6143IRGC by Texas Instruments is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 85 °C and has a supply voltage range of 2.4V to 3.6V, making it ideal for INDUSTRIAL applications requiring low power consumption and high performance in a compact SQUARE package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,525 parts In-Stock

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Digiode

USA . 4,060 parts In-Stock

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Native Components

USA . 901 parts In-Stock

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$1.605

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901

$1.605

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Northwest PG Solutions

USA . 699 parts In-Stock

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$1.766

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$1.766

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AZTECH Wire

Italy . 876 parts In-Stock

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$15.715

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One Stop Electronics

USA . 851 parts In-Stock

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$16.000

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851

$16.000

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Parana Technologies

USA . 436 parts In-Stock

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$24.436

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$25.103

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436

$24.436

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$25.103

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IDEA Electronic Components Group

UK . 908 parts In-Stock

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$27.456

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$26.083

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$24.710

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908

$27.456

$26.083

$24.710

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ChromeModa Solutions

Germany . 139 parts In-Stock

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$27.456

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$22.514

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Corohmni

South Africa . 102 parts In-Stock

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$72.634

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Corphita

USA . 2,390 parts In-Stock

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DigiPath Technology Company

USA . 752 parts In-Stock

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$24.754

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Overview

Unlock endless possibilities with the CC430F6143IRGC by Texas Instruments. Crafted with precision and expertise, this product exemplifies top-notch quality and reliability. Ideal for a wide range of applications in the Other Function uPs,uCs & Peripheral ICs category, this chip carrier boasts a very thin profile and a quad terminal position. Experience seamless performance with a nominal supply voltage of 3.3V and a maximum supply voltage of 3.6V. Elevate your projects to new heights with the CC430F6143IRGC, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the product, ensuring a long lifespan.

Surface Mount: YES

Surface mount technology allows for easy installation and compatibility with modern assembly processes.

Maximum Supply Voltage: 3.6 V

High maximum supply voltage allows for versatility and compatibility with various power sources.

Package Shape: SQUARE

Square package shape enables efficient use of space on a circuit board, optimizing layout and design.

No. of Terminals: 64

64 terminals provide ample connectivity options for various input and output requirements, enhancing functionality.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures reliable performance in harsh environmental conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to energy efficiency and signal integrity.

Nominal Supply Voltage: 3.3 V

Nominal supply voltage of 3.3V is a common standard in many applications, ensuring compatibility and ease of use.

Terminal Pitch: 0.5 mm

Small terminal pitch of 0.5mm allows for high-density mounting, reducing the overall footprint of the product on the circuit board.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs CC430F6143IRGC attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES IN 1.8V MINIMUM SUPPLY

JESD-30 Code:

S-PQCC-N64

Length:

9 mm

No. of Terminals:

64

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.4 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

9 mm

Peripheral IC Type:

Trade Compliance

CC430F6143IRGC Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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