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CC430F5123IRGZ

Texas Instruments

CC430F5123IRGZ by Texas Instruments

CC430F5123IRGZ by Texas Instruments is a CMOS microprocessor circuit with 48 terminals in a square chip carrier package. It operates b/w -40 to 85 °C with supply voltage range of 2.4V to 3.6V, making it ideal for industrial applications requiring low power consumption and compact design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,724 parts In-Stock

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Digiode

USA . 4,560 parts In-Stock

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AZTECH Wire

Italy . 314 parts In-Stock

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$11.991

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314

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One Stop Electronics

USA . 179 parts In-Stock

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$20.000

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Parana Technologies

USA . 2,366 parts In-Stock

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$29.665

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$2,754.807

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$26.698

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$29.665

$2,754.807

$26.698

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DigiPath Technology Company

USA . 1,439 parts In-Stock

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$32.664

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$30.051

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1,439

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ChromeModa Solutions

Germany . 6,641 parts In-Stock

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$33.331

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$27.331

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$33.331

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IDEA Electronic Components Group

UK . 351 parts In-Stock

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$33.331

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$31.664

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$29.998

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351

$33.331

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$29.998

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Corohmni

South Africa . 632 parts In-Stock

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$44.310

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Corphita

USA . 3,960 parts In-Stock

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Northwest PG Solutions

USA . 862 parts In-Stock

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Native Components

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Overview

Experience top-notch performance and reliability with the CC430F5123IRGZ by Texas Instruments. As a leader in semiconductor technology, Texas Instruments delivers unmatched quality and innovative solutions. This versatile microprocessor circuit is perfect for a wide range of applications, offering exceptional value and flexibility. Whether you're looking to enhance your IoT devices or streamline your industrial processes, the CC430F5123IRGZ provides the power and efficiency you need. Trust Texas Instruments to meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection for the integrated circuit, making it suitable for various industrial applications.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting onto circuit boards, saving space and simplifying the assembly process.

Maximum Supply Voltage: 3.6 V

Support for a maximum supply voltage of 3.6V ensures compatibility with a wide range of power sources, increasing the versatility of the product.

Minimum Supply Voltage: 2.4 V

With a minimum supply voltage of 2.4V, the product can operate efficiently even in low-power applications, optimizing energy consumption.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures reliable performance in challenging environments with elevated temperatures.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40°C enables the product to function effectively in cold conditions, expanding its usability to various settings.

Terminal Position: QUAD

Quad terminal position allows for efficient connectivity and signal flow, enhancing the functionality and performance of the device.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Being a microprocessor circuit peripheral IC type, this product offers advanced processing capabilities, making it suitable for complex applications requiring high computing power.

Technology: CMOS

Utilizing CMOS technology provides high speed, low power consumption, and compatibility with a wide range of digital systems, making it an efficient and reliable choice.

Nominal Supply Voltage: 3.3 V

Nominal supply voltage of 3.3V ensures stable and consistent power delivery, contributing to the reliability and performance of the product.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs CC430F5123IRGZ attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES IN 1.8V MINIMUM SUPPLY

JESD-30 Code:

S-PQCC-N48

Length:

7 mm

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.4 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

7 mm

Peripheral IC Type:

Trade Compliance

CC430F5123IRGZ Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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