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TND315S

Onsemi

TND315S by Onsemi

The Onsemi TND315S is a CMOS peripheral driver with 8 terminals in a small outline package. It operates b/w -40 °C to 125°C, suitable for automotive applications. With power supplies ranging from 4.5V to 25V, it features dual terminal positions and gull wing form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 947 parts In-Stock

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947

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Vyrian

USA . 142 parts In-Stock

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142

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Distributors (Availability)

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SupplyDigital Components

Austria . 4,280 parts In-Stock

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4,280

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TANS Electronics

Latvia . 3,969 parts In-Stock

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3,969

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Kulean Microsystems

USA . 3,146 parts In-Stock

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Corphita

USA . 529 parts In-Stock

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529

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UHIMA Technologies

Türkiye . 525 parts In-Stock

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525

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Corohmni

South Africa . 477 parts In-Stock

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477

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Problanco Electronics

Mexico . 230 parts In-Stock

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Overview

Elevate your peripheral driving experience with the TND315S by Onsemi. Crafted with precision and innovation, this product offers unparalleled quality and reliability that Onsemi is renowned for. Ideal for automotive applications, this compact and efficient driver delivers seamless power supplies ranging from 4.5V to 25V. Say goodbye to compatibility issues and hello to smooth operations with the TND315S. Elevate your projects with the best in class technology and performance that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the internal components of the peripheral driver.

Surface Mount: YES

Being surface mountable makes installation and integration of this peripheral driver easier and more convenient in various electronic devices.

Power Supplies (V): 4.5/25

The wide range of power supplies supported (4.5V to 25V) allows for compatibility with different systems and flexibility in power options.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this peripheral driver can function reliably in harsh environments or under heavy loads.

Technology: CMOS

The CMOS technology used in this peripheral driver ensures low power consumption, high noise immunity, and compatibility with various digital systems.

Driver No. of Bits: 2

The 2-bit driver allows for precise control and efficient management of peripheral devices connected to this driver.

Technical Specifications

Peripheral Drivers TND315S attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Driver No. of Bits:

2

JESD-30 Code:

R-PDSO-G8

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

4.5/25

Qualification:

Not Qualified

Sub-Category:

Peripheral Drivers

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

TND315S Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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