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TND316S-TL-2H

Onsemi

TND316S-TL-2H by Onsemi

TND316S-TL-2H by Onsemi is a CMOS peripheral driver with 8 terminals, operating temperature range of -40 to 125 °C. It has a max supply voltage of 25 V and nominal output peak current limit of 1 A. Ideal for automotive applications requiring a half bridge based peripheral driver with source and sink output current flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,461 parts In-Stock

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Vyrian

USA . 1,784 parts In-Stock

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Component Stockers USA

USA . 721 parts In-Stock

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Kulean Microsystems

USA . 7,131 parts In-Stock

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TANS Electronics

Latvia . 7,104 parts In-Stock

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SupplyDigital Components

Austria . 5,651 parts In-Stock

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Problanco Electronics

Mexico . 5,096 parts In-Stock

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Microchip USA

USA . 2,285 parts In-Stock

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Corphita

USA . 1,070 parts In-Stock

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UHIMA Technologies

Türkiye . 717 parts In-Stock

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Corohmni

South Africa . 135 parts In-Stock

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Overview

Discover unparalleled performance with the TND316S-TL-2H by Onsemi, a cutting-edge peripheral driver designed to exceed expectations. Backed by Onsemi's reputation for excellence, this product guarantees reliability and precision in every application. From automotive to industrial settings, the TND316S-TL-2H delivers unmatched value, providing customers with seamless operation and enhanced functionality. Experience the advantages of advanced technology and superior quality with this innovative solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Surface Mount: YES

Being surface mountable, the product can be easily integrated into PCBs, saving space and facilitating automated manufacturing processes.

Maximum Supply Voltage: 25 V

The high maximum supply voltage of 25V allows the device to be used in a wide range of applications without the risk of voltage overload.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage of 4.5V ensures that the device can operate efficiently even in low power scenarios.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, the product is suitable for use in high-temperature environments, such as automotive applications.

Width: 3.9 mm

The compact width of 3.9mm allows for space-efficient placement of the device on a PCB, suitable for applications where size constraints are a concern.

Technology: CMOS

The CMOS technology used in the product enables low power consumption and high noise immunity, making it suitable for battery-powered applications and environments with electromagnetic interference.

Nominal Output Peak Current Limit: 1 A

With a nominal output peak current limit of 1A, the device can handle high-current requirements, making it suitable for driving peripherals with varying power needs.

Output Current Flow Direction: SOURCE AND SINK

The ability to handle both sourcing and sinking of current allows the device to control peripherals that require bidirectional current flow, enhancing its versatility in a wide range of applications.

Technical Specifications

Peripheral Drivers TND316S-TL-2H attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

25 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

18 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

TND316S-TL-2H Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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