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TND315S-TL-E

Onsemi

TND315S-TL-E by Onsemi

TND315S-TL-E by Onsemi is a CMOS peripheral driver with 8 terminals, operating b/w -40 to 125 °C. It has a power supply range of 4.5-25V and is suitable for automotive applications due to its tin/bismuth terminal finish and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,577 parts In-Stock

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Digiode

USA . 268 parts In-Stock

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268

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AZTECH Wire

Italy . 895 parts In-Stock

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$19.510

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895

$19.510

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Kulean Microsystems

USA . 8,320 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,765 parts In-Stock

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5,765

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Corphita

USA . 1,972 parts In-Stock

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TANS Electronics

Latvia . 1,620 parts In-Stock

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SupplyDigital Components

Austria . 1,045 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Problanco Electronics

Mexico . 417 parts In-Stock

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Microchip USA

USA . 169 parts In-Stock

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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Overview

Upgrade your systems with the TND315S-TL-E by Onsemi, a premium peripheral driver that guarantees top-notch performance and reliability. Manufactured by industry leaders, this product is designed to meet the highest standards for automotive applications. With its advanced technology and durable construction, it ensures seamless operation even in extreme temperatures. Trust in Onsemi to deliver quality products that provide unmatched value and benefits to customers. Experience the advantages of the TND315S-TL-E and enhance your electronic devices today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on circuit boards.

Power Supplies (V): 4.5/25

Wide range of power supply options accommodates various voltage requirements, making it versatile.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures stability and performance even in harsh environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, improving efficiency.

Driver No. of Bits: 2

With 2 bits for drivers, this product offers sufficient control and precision for connected peripherals.

Technical Specifications

Peripheral Drivers TND315S-TL-E attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Driver No. of Bits:

2

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

4.5/25

Qualification:

Not Qualified

Sub-Category:

Peripheral Drivers

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

TND315S-TL-E Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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