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TND321VD

Onsemi

TND321VD by Onsemi

The Onsemi TND321VD is a CMOS half bridge peripheral driver with 8 terminals. It operates in automotive-grade temperatures (-40 to 125 °C) and has a supply voltage range of 4.5V to 25V. With a nominal output peak current limit of 1A, it is ideal for applications requiring fast turn-on/off times (0.05/0.045 us).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,050 parts In-Stock

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1,050

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Vyrian

USA . 681 parts In-Stock

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681

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Kulean Microsystems

USA . 8,396 parts In-Stock

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TANS Electronics

Latvia . 8,005 parts In-Stock

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Problanco Electronics

Mexico . 6,093 parts In-Stock

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SupplyDigital Components

Austria . 2,956 parts In-Stock

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Corphita

USA . 1,860 parts In-Stock

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UHIMA Technologies

Türkiye . 703 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Overview

Elevate your projects with the TND321VD by Onsemi - a top-tier manufacturer known for delivering exceptional quality and reliability. This cutting-edge peripheral driver offers unmatched performance, making it ideal for a wide range of applications. Its sleek design, high supply voltage range, and rapid turn-on/off times set it apart from the competition. Experience the value and benefits this product brings to your next project, maximizing efficiency and innovation every step of the way. Trust Onsemi to deliver excellence in every aspect of your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for automotive applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly.

Maximum Supply Voltage: 25 V

The high maximum supply voltage capability ensures compatibility with a wide range of power sources.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into existing system layouts.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting to different components within a circuit.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making it energy efficient and reliable.

Technical Specifications

Peripheral Drivers TND321VD attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-F8

Length:

2.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL8,.1,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Maximum Seated Height:

.8 mm

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage:

25 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

18 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Turn-off Time:

.045 us

Turn-on Time:

.05 us

Width:

2.3 mm

Trade Compliance

TND321VD Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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