Loading...

TIG062E8-TL-H

Onsemi

TIG062E8-TL-H by Onsemi

TIG062E8-TL-H by Onsemi is an N-CHANNEL IGBT with 400V max collector-emitter voltage, 6V max gate-emitter voltage, and 0.9V max gate-emitter threshold voltage. It operates up to 150 °C and is surface mountable. Ideal for power electronics applications requiring high-voltage switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,200

-

-

-

-

Digiode

USA . 704 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

704

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 582 parts In-Stock

1+ parts

$18.050

100+ parts

-

1k+ parts

-

10k+ parts

-

582

$18.050

-

-

-

Component Stockers USA

USA . 627 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

627

$99.990

-

-

-

Assy Fe

Spain . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,000

-

-

-

-

TANS Electronics

Latvia . 7,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,568

-

-

-

-

Problanco Electronics

Mexico . 4,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,475

-

-

-

-

SupplyDigital Components

Austria . 3,599 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,599

-

-

-

-

Kulean Microsystems

USA . 1,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,970

-

-

-

-

Corphita

USA . 1,816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,816

-

-

-

-

UHIMA Technologies

Türkiye . 602 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

602

-

-

-

-

Corohmni

South Africa . 259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

259

-

-

-

-

Overview

Experience exceptional quality and performance with the TIG062E8-TL-H by Onsemi. As a leading manufacturer of Insulated Gate Bipolar Transistors (IGBT), Onsemi delivers reliable and innovative solutions for a wide range of applications. With N-CHANNEL polarity and surface mount capability, this product offers maximum operating temperature of 150 °C and impressive collector-emitter voltage of 400V. Trust in the value and benefits that Onsemi's TIG062E8-TL-H provides, ensuring efficiency and reliability in your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for high power applications.

Surface Mount: YES

Surface mount IGBTs are easier to use and install, making them suitable for compact designs and saving space on the PCB.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this IGBT can withstand heat and operate reliably in demanding industrial environments.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows this IGBT to handle high voltage applications with ease.

Maximum Gate-Emitter Voltage: 6 V

The 6V maximum gate-emitter voltage ensures safe and reliable operation of the IGBT, protecting it from damage due to overvoltage.

Maximum Gate-Emitter Threshold Voltage: 0.9 V

The low gate-emitter threshold voltage of 0.9V allows for efficient and precise control of the IGBT, reducing power loss and improving performance.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and reliability, ensuring a strong and durable connection between the IGBT and the PCB.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) TIG062E8-TL-H attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

400 V

Maximum Gate-Emitter Threshold Voltage:

.9 V

Maximum Gate-Emitter Voltage:

6 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

TIG062E8-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20