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TIG065E8

Onsemi

TIG065E8 by Onsemi

The Onsemi TIG065E8 is an N-CHANNEL IGBT with a max VCE of 400V. It comes in a PLASTIC/EPOXY package with 8 terminals and built-in diode. Ideal for power electronics applications requiring high voltage switching capabilities in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,454 parts In-Stock

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Digiode

USA . 1,365 parts In-Stock

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SupplyDigital Components

Austria . 8,035 parts In-Stock

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TANS Electronics

Latvia . 3,566 parts In-Stock

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Problanco Electronics

Mexico . 2,914 parts In-Stock

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Kulean Microsystems

USA . 659 parts In-Stock

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Corphita

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Corohmni

South Africa . 175 parts In-Stock

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Kepictronics

USA . 100 parts In-Stock

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UHIMA Technologies

Türkiye . 61 parts In-Stock

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Overview

Boost your electronics projects with the TIG065E8 by Onsemi, a top-quality Insulated Gate Bipolar Transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL IGBT comes in a convenient surface mount package, making it perfect for a wide range of applications. Whether you're working on power supplies, motor drives, or inverters, the TIG065E8 provides the value, benefits, and advantages you need to take your projects to the next level. Upgrade your designs today with the TIG065E8 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the IGBT, making it durable and reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower conduction losses and higher efficiency compared to P-Channel IGBTs, making them suitable for high power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the IGBT from voltage spikes and reverse currents, improving the overall reliability of the device.

Surface Mount: YES

Surface mount IGBTs are easy to install and can save space on the PCB, making them ideal for compact electronic designs.

Package Shape: RECTANGULAR

Rectangular packages are easy to handle and provide good thermal dissipation, ensuring efficient operation of the IGBT.

Terminal Form: FLAT

Flat terminals make it easier to solder the IGBT onto the PCB, ensuring a secure electrical connection for optimal performance.

No. of Terminals: 8

Having 8 terminals allows for multiple connection options, enabling flexibility in circuit design and functionality.

Package Style (Meter): SMALL OUTLINE

Small outline packages save space on the PCB and are suitable for applications where size and weight are critical factors.

Maximum Collector-Emitter Voltage: 400 V

A high maximum collector-emitter voltage rating of 400V ensures that the IGBT can handle high voltage applications without breakdown, offering robust protection.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its stability and reliability in electronic devices, making it a suitable choice for IGBTs.

Terminal Position: DUAL

Dual terminal position allows for easy connection to external circuitry, enhancing the usability and versatility of the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) TIG065E8 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

400 V

JESD-30 Code:

R-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

TIG065E8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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