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SPI216

Onsemi

SPI216 by Onsemi

SPI216 by Onsemi is a Transistor with 20V max on-state voltage, 0.006A max on-state current, and 0.00003s response time. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNT with -25 to 80 °C operating temperature range and 4mm gap size.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,791 parts In-Stock

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Digiode

USA . 877 parts In-Stock

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Metaverse IC Inc.

Canada . 8,569 parts In-Stock

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Kepictronics

USA . 6,569 parts In-Stock

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SupplyDigital Components

Austria . 3,656 parts In-Stock

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Kulean Microsystems

USA . 2,138 parts In-Stock

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TANS Electronics

Latvia . 2,125 parts In-Stock

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Problanco Electronics

Mexico . 939 parts In-Stock

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UHIMA Technologies

Türkiye . 280 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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Corphita

USA . 132 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the SPI216 by Onsemi. Manufactured with precision and expertise, this Other Function Optoelectronics component offers unmatched quality and reliability. From ensuring seamless operation to providing efficient performance, the SPI216 is the ideal choice for a wide range of applications. Experience the value it brings to your projects with its fast response time, versatile mounting feature, and high on-state voltage. Trust Onsemi to deliver innovative solutions that exceed expectations.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

Allows for higher voltage operation, making it suitable for a wide range of applications.

Output Circuit Type: Transistor

Transistor circuit provides efficient switching and amplification capabilities for the optoelectronic device.

Maximum Operating Temperature: 80 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -25 °C

Capable of operating in cold temperatures, making it versatile for different use cases.

Maximum Response Time: 0.00003 s

Ultra-fast response time ensures quick activation and deactivation of the optoelectronic device.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation of the optoelectronic device.

Gap Size: 4 mm

Optimal gap size for efficient operation and signal transmission in the optoelectronic device.

Maximum On State Current: 0.006 A

Capable of handling high current loads, making it suitable for various applications requiring current switching.

Technical Specifications

Other Function Optoelectronics SPI216 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

4 mm

Mounting Feature:

Maximum On State Current:

.006 A

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.00003 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI216 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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