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SPI206-10

Onsemi

SPI206-10 by Onsemi

SPI206-10 by Onsemi is a 20V Transistor with 0.00003s response time. Operating temp range: -25 to 85 °C. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNT and 3mm gap size.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,484 parts In-Stock

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Vyrian

USA . 2,150 parts In-Stock

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Problanco Electronics

Mexico . 3,890 parts In-Stock

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3,890

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Kulean Microsystems

USA . 3,146 parts In-Stock

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Corphita

USA . 1,793 parts In-Stock

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SupplyDigital Components

Austria . 1,770 parts In-Stock

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TANS Electronics

Latvia . 1,731 parts In-Stock

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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Corohmni

South Africa . 274 parts In-Stock

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Overview

Enhance your electronic projects with the SPI206-10 by Onsemi. Known for their top-tier manufacturing, Onsemi offers reliable products that guarantee quality and performance. This optoelectronic component boasts a fast response time and a wide operating temperature range, making it ideal for various applications. From automotive to industrial electronics, the SPI206-10 provides value and efficiency to customers looking for reliable solutions. Upgrade your projects today and experience the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

Having a high maximum on state voltage allows the product to efficiently handle higher voltages, making it suitable for a wide range of applications.

Output Circuit Type: Transistor

The transistor output circuit type ensures reliable switching and amplification of signals, making the product versatile for various optoelectronic functions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand elevated temperatures without compromising performance, making it suitable for demanding environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature allows the product to function effectively even in cold conditions, increasing its usability in diverse settings.

Maximum Response Time: 0.00003 s

The extremely fast maximum response time ensures rapid signal processing and minimal delay, making the product ideal for time-sensitive applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable installation of the product on circuit boards, ensuring reliability and durability in operation.

Gap Size: 3 mm

The 3 mm gap size allows for precise positioning and alignment of components, facilitating accurate light transmission and optimal performance of the product.

Technical Specifications

Other Function Optoelectronics SPI206-10 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

3 mm

Mounting Feature:

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.00003 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI206-10 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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