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SPI206

Onsemi

SPI206 by Onsemi

SPI206 by Onsemi is a Transistor with 20V Max On State Voltage, 0.00003s Max Response Time, and -25 to 85 °C Operating Temp. Ideal for optoelectronic applications, it features Through Hole Mounting and a 3mm Gap Size for precise circuit control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,314 parts In-Stock

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Vyrian

USA . 893 parts In-Stock

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893

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TANS Electronics

Latvia . 8,174 parts In-Stock

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8,174

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Kulean Microsystems

USA . 6,244 parts In-Stock

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Problanco Electronics

Mexico . 4,231 parts In-Stock

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SupplyDigital Components

Austria . 3,992 parts In-Stock

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Corphita

USA . 2,383 parts In-Stock

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UHIMA Technologies

Türkiye . 873 parts In-Stock

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873

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Corohmni

South Africa . 436 parts In-Stock

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Overview

Discover the SPI206 by Onsemi, a premium quality optoelectronic component designed to deliver superior performance and reliability. Manufactured by Onsemi, a trusted industry leader, this product is ideal for a wide range of applications. With its fast response time and high operating temperatures, the SPI206 offers unmatched value and benefits to customers seeking top-notch quality and efficiency. Upgrade your electronic devices with the SPI206 and experience the difference that Onsemi's expertise can make.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

With a high maximum on state voltage, this product is suitable for applications requiring low voltage operation.

Output Circuit Type: Transistor

The use of a transistor output circuit type provides efficient signal amplification and switching capabilities.

Maximum Operating Temperature: 85 °C

This product can operate at relatively high temperatures, making it suitable for industrial and harsh environments.

Minimum Operating Temperature: -25 °C

The wide range of minimum operating temperature ensures reliable operation even in extreme cold conditions.

Maximum Response Time: 0.00003 s

The fast response time of this product allows for quick signal processing and high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides secure and stable installation on circuit boards.

Gap Size: 3 mm

The 3mm gap size offers versatility in various applications and allows for precise positioning.

Technical Specifications

Other Function Optoelectronics SPI206 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

3 mm

Mounting Feature:

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.00003 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI206 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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