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SPI228

Onsemi

SPI228 by Onsemi

SPI228 by Onsemi is a transistor optoelectronic component with max on-state voltage of 20V and current of 0.005A. It operates b/w -25 °C to 80°C, with response time of 5μs. Ideal for applications requiring through-hole mounting, such as industrial control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,873 parts In-Stock

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Digiode

USA . 489 parts In-Stock

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489

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Kepictronics

USA . 22,890 parts In-Stock

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22,890

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Problanco Electronics

Mexico . 6,736 parts In-Stock

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Kulean Microsystems

USA . 3,471 parts In-Stock

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TANS Electronics

Latvia . 1,692 parts In-Stock

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SupplyDigital Components

Austria . 931 parts In-Stock

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931

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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Corohmni

South Africa . 392 parts In-Stock

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Corphita

USA . 242 parts In-Stock

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Overview

Unlock endless possibilities with the SPI228 by Onsemi - a premium quality optoelectronic component that revolutionizes the way you approach circuit design. With a robust construction and unparalleled performance, this product is perfect for a wide range of applications. From enhancing security systems to improving automation processes, the SPI228 offers incredible value and benefits that will elevate your projects to new heights. Trust Onsemi's expertise and experience to deliver a product that exceeds expectations and unlocks a world of possibilities for your next innovation.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

Ability to handle high voltage signals makes this product suitable for applications requiring robust performance.

Output Circuit Type: Transistor

Transistor output circuit type provides fast response times and efficient signal processing capabilities.

Maximum Operating Temperature: 80 °C

Wide operating temperature range allows for use in various environmental conditions without affecting performance.

Minimum Operating Temperature: -25 °C

Ability to operate at low temperatures enables reliable functionality in cold environments.

Maximum Response Time: 0.000005 s

Extremely fast response time ensures quick and accurate signal processing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable attachment, making installation easier and more reliable.

Gap Size: 1.5 mm

Optimal gap size ensures efficient signal transfer and minimizes signal loss.

Maximum On State Current: 0.005 A

Ability to handle high current signals makes this product suitable for applications requiring reliable performance under load.

Technical Specifications

Other Function Optoelectronics SPI228 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

1.5 mm

Mounting Feature:

Maximum On State Current:

.005 A

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.000005 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI228 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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