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SPI235-18

Onsemi

SPI235-18 by Onsemi

SPI235-18 by Onsemi is a Transistor with 20V Max On State Voltage, 0.000005s Max Response Time, and 2mm Gap Size. Ideal for optoelectronic applications, it operates b/w -20 °C to 80°C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,512 parts In-Stock

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Digiode

USA . 119 parts In-Stock

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,986 parts In-Stock

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7,986

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Kulean Microsystems

USA . 6,701 parts In-Stock

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Kepictronics

USA . 6,569 parts In-Stock

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TANS Electronics

Latvia . 5,479 parts In-Stock

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Corphita

USA . 1,650 parts In-Stock

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SupplyDigital Components

Austria . 1,591 parts In-Stock

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UHIMA Technologies

Türkiye . 866 parts In-Stock

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Corohmni

South Africa . 419 parts In-Stock

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Overview

Discover the SPI235-18 by Onsemi, a top-tier manufacturer renowned for its superior quality and reliability. This product falls under the category of Other Function Optoelectronics, offering a maximum on-state voltage of 20V and a fast response time of 0.000005s. Ideal for various applications, this transistor-based component operates efficiently in temperatures ranging from -20 °C to 80°C. Unlock limitless possibilities with the SPI235-18, providing unmatched value and benefits to customers seeking high-performance optoelectronics solutions.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

This product can handle a maximum on state voltage of 20 V, making it suitable for a wide range of applications.

Output Circuit Type: Transistor

The use of a transistor in the output circuit provides efficient control and amplification of signals.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this product can withstand high temperature environments.

Minimum Operating Temperature: -20 °C

The ability to operate at temperatures as low as -20 °C makes this product suitable for use in cold environments.

Maximum Response Time: 0.000005 s

With a very fast maximum response time of 0.000005 seconds, this product can quickly react to input signals.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easy to securely install this product on a circuit board.

Gap Size: 2 mm

The 2 mm gap size ensures proper spacing and insulation between components, preventing interference and short circuits.

Technical Specifications

Other Function Optoelectronics SPI235-18 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

2 mm

Mounting Feature:

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.000005 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI235-18 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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