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SLP3118B51

Onsemi

SLP3118B51 by Onsemi

SLP3118B51 by Onsemi features peak wavelength of 567nm, diffused lens type, and max reverse voltage of 3V. Ideal for optoelectronic applications with green-yellow color emission. Operates b/w -25 °C to 85°C, standing at a height of 5.5mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 223 parts In-Stock

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Vyrian

USA . 126 parts In-Stock

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SupplyDigital Components

Austria . 6,194 parts In-Stock

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Kulean Microsystems

USA . 4,923 parts In-Stock

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Problanco Electronics

Mexico . 2,443 parts In-Stock

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Corphita

USA . 2,266 parts In-Stock

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TANS Electronics

Latvia . 2,049 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Overview

Discover the SLP3118B51 by Onsemi, a top-quality optoelectronic component that promises unmatched performance and reliability. Manufactured by Onsemi, a renowned leader in the industry, this product is designed to meet the highest standards of quality and precision. Ideal for a wide range of applications, this component offers customers exceptional value and benefits, making it a smart choice for any project. Experience the advantages of the SLP3118B51 and elevate your designs to the next level.

Feature Benefit Bullets

Peak Wavelength (nm) 567

This product emits light at a specific wavelength of 567nm, which is ideal for applications requiring a green-yellow color.

Lens Type DIFFUSED

The diffused lens type ensures uniform light distribution and reduces glare, making it suitable for applications where a softer light output is desired.

Maximum Operating Temperature 85 °C

With a high maximum operating temperature of 85 °C, this product can withstand heat better than others, making it more resilient in harsh environmental conditions.

Height 5.5 mm

The compact height of 5.5mm makes this product suitable for space-constrained applications where a low profile is required.

Minimum Operating Temperature -25 °C

The low minimum operating temperature of -25 °C ensures reliable performance even in cold environments.

Color At Wavelength Green-Yellow

This product emits a green-yellow light at the specified wavelength, making it ideal for applications that require a specific color output.

Maximum Reverse Voltage 3 V

The maximum reverse voltage of 3V protects the product from damage in case of reverse polarity connection or voltage spikes, increasing its durability and longevity.

Technical Specifications

Other Function Optoelectronics SLP3118B51 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Color At Wavelength:

Green-Yellow

Lens Type:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Height:

5.5 mm

Peak Wavelength (nm):

567

Maximum Reverse Voltage:

3 V

Sub-Category:

Visible LEDs

Trade Compliance

SLP3118B51 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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