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SPI236-15

Onsemi

SPI236-15 by Onsemi

SPI236-15 by Onsemi is a Darlington optoelectronic device with 20V max on-state voltage. Operating temp range: -20 to 80 °C, response time: 0.0001s. Ideal for applications requiring through-hole mounting and 2mm gap size.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Digiode

USA . 2,318 parts In-Stock

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Vyrian

USA . 1,299 parts In-Stock

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Problanco Electronics

Mexico . 7,653 parts In-Stock

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SupplyDigital Components

Austria . 4,941 parts In-Stock

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TANS Electronics

Latvia . 4,482 parts In-Stock

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Corphita

USA . 1,559 parts In-Stock

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UHIMA Technologies

Türkiye . 740 parts In-Stock

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Kulean Microsystems

USA . 485 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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Overview

Unleash the power of innovation with the SPI236-15 by Onsemi, a cutting-edge optoelectronics marvel that redefines excellence in performance and reliability. This top-notch product boasts a state-of-the-art Darlington output circuit type, ensuring seamless operation in a wide range of applications. From automotive to industrial sectors, this versatile component offers unparalleled value and benefits, making it a must-have for savvy customers looking to stay ahead in today's competitive market. Trust Onsemi's proven track record of quality and expertise to deliver exceptional results every time.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

Provides a high maximum operating voltage, allowing for reliable operation in a variety of voltage conditions.

Output Circuit Type: Darlington

Darlington configuration provides high current gain and improved performance for driving various loads.

Maximum Operating Temperature: 80 °C

Can operate efficiently in higher temperature environments, ensuring stability and durability.

Minimum Operating Temperature: -20 °C

Capable of functioning in low temperature conditions, making it versatile for different environments.

Maximum Response Time: 0.0001 s

Has a fast response time for quick and accurate switching, ideal for time-sensitive applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation, ensuring reliable performance.

Gap Size: 2 mm

The 2 mm gap size allows for proper isolation and prevents any unwanted electrical interference.

Technical Specifications

Other Function Optoelectronics SPI236-15 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

2 mm

Mounting Feature:

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Darlington

Maximum Response Time:

.0001 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI236-15 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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