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SPI208

Onsemi

SPI208 by Onsemi

SPI208 by Onsemi is a Transistor with 20V Max On State Voltage, 0.00003s Max Response Time, and -25 to 85 °C Operating Temp. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNT with 3mm Gap Size.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 514 parts In-Stock

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Vyrian

USA . 172 parts In-Stock

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Problanco Electronics

Mexico . 7,961 parts In-Stock

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SupplyDigital Components

Austria . 7,934 parts In-Stock

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Kulean Microsystems

USA . 5,353 parts In-Stock

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TANS Electronics

Latvia . 2,882 parts In-Stock

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Corphita

USA . 2,499 parts In-Stock

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UHIMA Technologies

Türkiye . 551 parts In-Stock

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Corohmni

South Africa . 161 parts In-Stock

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Overview

Immerse yourself in a world of high-quality optoelectronics with the SPI208 by Onsemi. With a reputation for excellence, Onsemi delivers top-of-the-line products that surpass industry standards. The SPI208 is perfect for a wide range of applications, offering customers unparalleled value and benefits. Experience the advantages of this product firsthand and unlock its full potential for your projects. Elevate your work with Onsemi's SPI208 today.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

The high maximum on state voltage of 20 V allows this optoelectronic device to handle high voltage applications with ease.

Output Circuit Type: Transistor

The transistor output circuit type provides reliable and efficient switching for various electronic applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can withstand high temperature environments ensuring reliable performance.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this product to operate in cold environments without any issues.

Maximum Response Time: 0.00003 s

The ultra-fast maximum response time of 0.00003 seconds ensures quick and precise switching of signals.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design makes it easy to securely attach this optoelectronic device to a circuit board for stable operation.

Gap Size: 3 mm

The 3mm gap size ensures proper insulation and spacing between components for safe and reliable operation.

Technical Specifications

Other Function Optoelectronics SPI208 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

3 mm

Mounting Feature:

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.00003 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI208 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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