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SPI202

Onsemi

SPI202 by Onsemi

The Onsemi SPI202 is a Transistor Output Optoelectronic device with 20V max on-state voltage, 0.003A max on-state current, and 0.00003s response time. Ideal for THROUGH HOLE MOUNT applications, it operates b/w -25 °C to 80°C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,491 parts In-Stock

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Digiode

USA . 2,228 parts In-Stock

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2,228

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Distributors (Availability)

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Kulean Microsystems

USA . 4,468 parts In-Stock

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4,468

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TANS Electronics

Latvia . 3,997 parts In-Stock

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SupplyDigital Components

Austria . 1,432 parts In-Stock

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Corphita

USA . 1,169 parts In-Stock

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UHIMA Technologies

Türkiye . 314 parts In-Stock

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314

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Problanco Electronics

Mexico . 290 parts In-Stock

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Corohmni

South Africa . 207 parts In-Stock

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Overview

Elevate your optoelectronic projects with the SPI202 by Onsemi, a cutting-edge solution that promises unmatched quality and performance. Manufactured by industry leader Onsemi, this product guarantees reliability and efficiency in various applications. From enhancing signal transmission to improving circuit functionality, the SPI202 offers unparalleled value and benefits to customers. Explore the endless possibilities with the SPI202 and revolutionize your projects today.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

With a high maximum on state voltage, this product can safely handle a range of electrical operations without risk of damage.

Output Circuit Type: Transistor

The transistor output circuit type provides efficient and reliable operation for various optoelectronic functions.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature ensures that this product can function effectively even under demanding environmental conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature allows this product to be used in a wide range of environments, including cold temperatures.

Maximum Response Time: 0.00003 s

With an extremely fast maximum response time, this product can quickly and accurately react to input signals.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design makes installation of this product easy and secure, ensuring reliable performance in various applications.

Gap Size: 3.8 mm

The 3.8 mm gap size allows for precise positioning and efficient operation of this optoelectronic component.

Maximum On State Current: 0.003 A

With a maximum on state current of 0.003 A, this product can handle a moderate level of electrical current for optimal performance.

Technical Specifications

Other Function Optoelectronics SPI202 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

3.8 mm

Mounting Feature:

Maximum On State Current:

.003 A

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.00003 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI202 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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