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SPI226

Onsemi

SPI226 by Onsemi

SPI226 by Onsemi is a Transistor with 20V max on-state voltage, 0.006A max on-state current, and 0.00001s response time. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNT with operating temp range of -25 °C to 80°C and 3mm gap size.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 548 parts In-Stock

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Digiode

USA . 275 parts In-Stock

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Problanco Electronics

Mexico . 6,958 parts In-Stock

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SupplyDigital Components

Austria . 6,400 parts In-Stock

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Kulean Microsystems

USA . 5,869 parts In-Stock

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TANS Electronics

Latvia . 4,309 parts In-Stock

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Corphita

USA . 2,156 parts In-Stock

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UHIMA Technologies

Türkiye . 774 parts In-Stock

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Corohmni

South Africa . 347 parts In-Stock

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Overview

Unleash the power of innovation with the SPI226 by Onsemi, a cutting-edge optoelectronics solution designed to elevate your projects to new heights. Manufactured by the industry leader Onsemi, this transistor-based device boasts unparalleled quality and reliability. From automotive to industrial applications, the SPI226 offers customers unmatched value and performance. Experience lightning-fast response times, precise on-state voltage control, and seamless integration with its through-hole mounting feature. Elevate your designs and exceed expectations with the SPI226 from Onsemi.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

This high maximum on state voltage allows the product to work with a wide range of input voltages, increasing its versatility.

Output Circuit Type: Transistor

Transistor output circuit type ensures efficient signal amplification and reliability in various applications.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this product can withstand high temperatures, making it suitable for industrial applications.

Minimum Operating Temperature: -25 °C

The minimum operating temperature of -25 °C allows the product to operate effectively in cold environments, enhancing its usability in diverse conditions.

Maximum Response Time: 0.00001 s

The extremely fast maximum response time of 0.00001 seconds ensures quick and accurate performance, making it ideal for time-sensitive applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies installation and provides a secure and stable placement for the product, reducing the risk of displacement.

Gap Size: 3 mm

The 3 mm gap size offers flexibility in positioning and alignment, allowing for precise placement in circuits or systems.

Maximum On State Current: 0.006 A

With a maximum on state current of 0.006 amperes, this product can handle moderate current loads efficiently, making it suitable for a wide range of applications.

Technical Specifications

Other Function Optoelectronics SPI226 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

3 mm

Mounting Feature:

Maximum On State Current:

.006 A

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.00001 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI226 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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