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SPI-236-17

Onsemi

SPI-236-17 by Onsemi

SPI-236-17 by Onsemi is a Transistor with 20V Max On State Voltage. It operates b/w -20 °C to 80°C, with response time of 0.000005s. Ideal for THROUGH HOLE MOUNT applications requiring 2mm gap size.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,861 parts In-Stock

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Vyrian

USA . 1,496 parts In-Stock

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1,496

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Distributors (Availability)

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Metaverse IC Inc.

Canada . 8,900 parts In-Stock

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8,900

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Kepictronics

USA . 6,900 parts In-Stock

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6,900

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SupplyDigital Components

Austria . 6,007 parts In-Stock

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6,007

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Kulean Microsystems

USA . 3,197 parts In-Stock

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3,197

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TANS Electronics

Latvia . 629 parts In-Stock

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629

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Corphita

USA . 390 parts In-Stock

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390

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UHIMA Technologies

Türkiye . 322 parts In-Stock

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Corohmni

South Africa . 161 parts In-Stock

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Problanco Electronics

Mexico . 115 parts In-Stock

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Overview

Upgrade your optoelectronics with the SPI-236-17 by Onsemi, a high-quality product that offers superior performance and reliability. This versatile device is perfect for a wide range of applications, providing customers with value and peace of mind. With its fast response time and durable construction, the SPI-236-17 is sure to exceed your expectations. Trust Onsemi for all your optoelectronic needs.

Feature Benefit Bullets

Maximum On State Voltage: 20 V

The high maximum on state voltage of 20 V ensures that the product can handle a wide range of voltage levels, making it versatile for different applications.

Output Circuit Type: Transistor

The use of a transistor in the output circuit provides efficient and reliable switching capabilities, making the product suitable for various optoelectronic applications.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this product can operate in demanding environments without risking damage, ensuring long-term reliability.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20 °C allows the product to function in colder conditions, increasing its usability in a wider range of environments.

Maximum Response Time: 0.000005 s

The incredibly fast maximum response time of 0.000005 s ensures quick and precise performance, making this product ideal for applications requiring rapid signal processing.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design simplifies the installation process, providing secure and stable mounting for the product on a circuit board or other components.

Gap Size: 2 mm

The 2 mm gap size allows for efficient light transmission or isolation between components, enhancing the product's performance in optoelectronic applications where precise spacing is crucial.

Technical Specifications

Other Function Optoelectronics SPI-236-17 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

2 mm

Mounting Feature:

Maximum On State Voltage:

20 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Transistor

Maximum Response Time:

.000005 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI-236-17 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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