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SLR938AV8

Onsemi

SLR938AV8 by Onsemi

SLR938AV8 by Onsemi is an Infrared LED with 0.1A max forward current, peak wavelength of 945nm, and 40° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -25 °C to 80°C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 786 parts In-Stock

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Digiode

USA . 563 parts In-Stock

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TANS Electronics

Latvia . 4,737 parts In-Stock

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SupplyDigital Components

Austria . 4,359 parts In-Stock

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Problanco Electronics

Mexico . 2,126 parts In-Stock

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Kulean Microsystems

USA . 1,036 parts In-Stock

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UHIMA Technologies

Türkiye . 679 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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Corphita

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Overview

Experience the superior quality and performance of the SLR938AV8 by Onsemi, a leading manufacturer of cutting-edge technology. This Infrared LED offers unmatched reliability and precision, making it ideal for a wide range of applications. With a peak wavelength of 945nm and a maximum forward current of 0.1A, this product delivers exceptional value and benefits to customers seeking high-quality infrared lighting solutions. Illuminate your projects with confidence using the SLR938AV8.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The high maximum forward current rating of 0.1 A ensures that this Infrared LED can handle heavy duty applications without overheating or malfunctioning.

Peak Wavelength (nm): 945

The peak wavelength of 945 nm indicates that this Infrared LED is optimized for efficient energy transfer, making it ideal for use in applications where precise and reliable infrared lighting is required.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this Infrared LED can withstand high temperature environments and continue to function reliably, ensuring longevity and durability in various operating conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this Infrared LED to be used in cold environments without compromising its performance, making it versatile for a wide range of applications.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage rating of 5 V protects this Infrared LED from damage due to reverse polarity, ensuring its longevity and reliability in diverse electrical setups.

Viewing Angle: 40°

The wide viewing angle of 40° allows for a broad and consistent distribution of infrared light, making this LED suitable for applications where a wide coverage area is needed.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process of this Infrared LED, making it convenient to integrate into various electronic devices and systems with ease.

Technical Specifications

Infrared LEDs SLR938AV8 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

40 deg

Trade Compliance

SLR938AV8 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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