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SLR903C

Onsemi

SLR903C by Onsemi

SLR903C by Onsemi is an Infrared LED with peak wavelength of 945nm, forward current of 0.05A, and viewing angle of 40°. Ideal for applications requiring fast response time (0.000001s) and operating temperatures ranging from -25 °C to 100°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,412 parts In-Stock

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Digiode

USA . 583 parts In-Stock

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Kulean Microsystems

USA . 5,907 parts In-Stock

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SupplyDigital Components

Austria . 3,193 parts In-Stock

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Corphita

USA . 1,776 parts In-Stock

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UHIMA Technologies

Türkiye . 610 parts In-Stock

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Problanco Electronics

Mexico . 566 parts In-Stock

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TANS Electronics

Latvia . 532 parts In-Stock

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Corohmni

South Africa . 271 parts In-Stock

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Overview

Illuminate your world with the SLR903C Infrared LED by Onsemi. Known for their superior quality and reliability, Onsemi's products are trusted by professionals worldwide. The SLR903C is perfect for applications such as remote controls, security systems, and night vision cameras. With a peak wavelength of 945nm and a response time of 0.000001s, this LED offers unmatched performance. Experience the value and benefits of Onsemi's cutting-edge technology with the SLR903C.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

The low maximum forward current helps in extending the lifespan of the Infrared LED and prevents overheating, making it a reliable choice for long-term usage.

Peak Wavelength (nm): 945

The high peak wavelength of 945 nm ensures optimal performance for applications requiring a specific wavelength range, making this Infrared LED suitable for precise sensing and communication purposes.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of 100 °C allows this Infrared LED to function effectively in various environmental conditions, offering versatility and durability.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C enables this Infrared LED to operate in cold environments without compromising its performance, making it suitable for a wide range of applications.

Maximum Response Time: 0.000001 s

The ultra-fast maximum response time of 0.000001 seconds ensures quick and accurate switching, ideal for applications requiring rapid signal transmission and detection.

Maximum Reverse Voltage: 5 V

The low maximum reverse voltage of 5 volts protects the Infrared LED from potential damage due to reverse polarity, ensuring reliable operation and longevity.

Semiconductor Material: GaAs

The use of Gallium Arsenide (GaAs) as the semiconductor material offers high efficiency and reliability, making this Infrared LED a dependable choice for demanding applications.

Viewing Angle: 40°

The wide viewing angle of 40° allows for better coverage and visibility, making this Infrared LED suitable for applications requiring a broad field of illumination or detection.

Spectral Bandwidth: 45 m

The narrow spectral bandwidth of 45 nm provides precise control over the emitted light, making this Infrared LED ideal for applications requiring accurate wavelength selection or filtering.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure attachment of the Infrared LED, making it convenient for both prototyping and mass production applications.

Maximum Forward Voltage: 1.4 V

The low maximum forward voltage of 1.4 volts helps in reducing power consumption and heat dissipation, making this Infrared LED energy-efficient and cost-effective for continuous operation.

Technical Specifications

Infrared LEDs SLR903C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.4 V

Mounting Feature:

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

40 deg

Trade Compliance

SLR903C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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