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SLR738AV30

Onsemi

SLR738AV30 by Onsemi

SLR738AV30 by Onsemi is an Infrared LED with 0.1A max forward current, 850nm peak wavelength, and 80 °C max operating temp. Ideal for applications requiring a 13° viewing angle, it has a max reverse voltage of 3V. Suitable for THROUGH HOLE MOUNTing, with a low forward voltage of 1.7V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 1,118 parts In-Stock

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Digiode

USA . 851 parts In-Stock

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SupplyDigital Components

Austria . 5,957 parts In-Stock

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Problanco Electronics

Mexico . 5,813 parts In-Stock

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TANS Electronics

Latvia . 5,471 parts In-Stock

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Kulean Microsystems

USA . 1,076 parts In-Stock

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Corphita

USA . 1,069 parts In-Stock

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UHIMA Technologies

Türkiye . 199 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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Overview

Illuminate your world with the SLR738AV30 Infrared LED by Onsemi! Renowned for their top-notch quality and reliability, Onsemi delivers cutting-edge technology that exceeds industry standards. Designed for a wide range of applications, this powerful LED offers a peak wavelength of 850nm and a maximum forward current of 0.1A, ensuring optimal performance in any environment. Whether you're enhancing security systems or improving sensor technology, the SLR738AV30 provides unmatched value, efficiency, and versatility. Upgrade your projects with Onsemi today!

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

High maximum forward current allows for efficient operation and ensures reliable performance.

Peak Wavelength (nm): 850

The peak wavelength of 850 nm makes these infrared LEDs suitable for various applications requiring infrared lighting.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, these LEDs can withstand higher temperatures without performance degradation.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C ensures that these LEDs can function in colder environments.

Maximum Reverse Voltage: 3 V

The maximum reverse voltage of 3V provides protection against reverse polarity and ensures the longevity of the LEDs.

Viewing Angle: 13°

The narrow viewing angle of 13° allows for focused and directional infrared illumination, making them ideal for specific applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure placement of the LEDs on the circuit board.

Maximum Forward Voltage: 1.7 V

The low maximum forward voltage of 1.7V ensures energy-efficient operation, reducing power consumption and overall cost.

Technical Specifications

Infrared LEDs SLR738AV30 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.7 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

13 deg

Trade Compliance

SLR738AV30 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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